| 000820 (2006) |
| High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications |
| 000860 (2006) |
| Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications |
| 001C68 (1997) |
| High performance 1.3 μm SLMQW BRS lasers for 85°C operation |
| 002151 (1995) |
| Modeling and measurement of spatial-hole-burning applied to amplitude modulated coupling distributed feedback lasers |
| 002281 (1994-06) |
| Propriétés spectro-temporelles des lasers semiconducteurs InGaAsP impulsionnels et étude de schémas originaux pour la génération d'impulsions brèves à 1,3 micronmètres et 1,5 micronmètres |
| 000654 (2007) |
| Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications |
| 000844 (2006) |
| Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors |
| 000996 (2005) |
| Design of monolithic integrated Bragg gratings in InGaAsP/InP materials as chirped pulse compressors |
| 000F78 (2002) |
| Measurement of gain spectra, refractive index shift and linewidth enhancement factor in Al-free 980 nm lasers with broadened waveguide |
| 001017 (2002) |
| Fabrication and characterisation of laterally coupled lasers |
| 001156 (2001) |
| Strain and temperature distribution in broad-area high-power laser diodes under operation determined by high resolution X-ray diffraction and topography |
| 001191 (2001) |
| Observation of dislocation generation in highly strained quantum well lasers during operation |
| 001268 (2001) |
| Detection and localization of degradation damaged regions in 1.3 μm laser diodes on InP using low-coherence reflectometry |
| 001291 (2001) |
| (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range |
| 001669 (1999) |
| Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes |
| 001909 (1998) |
| Widely tunable 1.55-μm lasers for wavelength-division-multiplexed optical fiber communications |
| 001B93 (1997) |
| Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates |
| 001C10 (1997) |
| Self-consistent 1-D solution of multiquantum-well laser equations |
| 001C65 (1997) |
| High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE |
| 002100 (1995) |
| Analyse des bruits blancs optique et électrique d'une tête d'émission laser à réaction répartie en présence d'une réinjection optique |
| 002271 (1994-07) |
| Contribution à l'optimisation de structures laser à puits quantiques contraints sur la maille d'InP |
| 002437 (1994) |
| Band-structure engineering in straining semiconductor lasers : Strained-layer optoelectronics materials and devices |
| 000475 (2009) |
| A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation |
| 000561 (2008) |
| InAsN/GaSb/InAsN 'W' quantum well laser for mid-infrared emission : from electronic structure to threshold current density calculations |
| 000657 (2007) |
| Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures |
| 000682 (2007) |
| First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer |
| 000738 (2006) |
| Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm) |
| 000855 (2006) |
| Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers |
| 000939 (2005) |
| Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate |
| 000A08 (2005) |
| Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection |
| 000A87 (2004) |
| Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser |
| 000B02 (2004) |
| Optimization of large band-gap barriers for reducing leakage in bipolar cascade lasers |
| 000B08 (2004) |
| Negative refraction at infrared wavelengths in a two-dimensional photonic crystal |
| 000D71 (2003) |
| Experimental measurements of the ridge spacing influence on the frequency response and optical spectrum of laterally coupled laser diodes |
| 000D80 (2003) |
| Early failure signatures of 1310 nm laser modules using electrical, optical and spectral measurements |
| 001318 (2000-09) |
| Étude de diodes lasers à base de GaAsSb/GaInAs/GaAs sur substrat de GaAs pour une émission à 1,3 μm |
| 001697 (1999) |
| Multiple quantum well optically addressed spatial light modulators operating at 1.55 μm with high diffraction efficiency and high sensitivity |
| 001B84 (1997) |
| Undercut ridge structures : A novel approach to 1.3/1.55-μm vertical-cavity surface-emitting lasers |
| 001C02 (1997) |
| Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers |
| 001C33 (1997) |
| Nonlinear optical and bistable properties of a wafer-fused vertical-cavity device based on InGaAsP |
| 001C62 (1997) |
| Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux |
| 001E20 (1996-04) |
| Dispositifs bistables à cavité verticale pour la commutation tout-optique aux longueurs d'onde télécom |
| 001F13 (1996) |
| Leading-edge laser production using two-inch technology |
| 001F92 (1995-12) |
| Lasers à injection à Ga0.88 In0.12 As0.10 Sb0.90 |
| 002371 (1994) |
| On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator |
| 002406 (1994) |
| Full polarization intensitivity of a 20 Gb/s strained-MQW electroabsorption modulator |
| 002453 (1994) |
| 1.55 μm polarisation independent semiconductor optical amplifier with 25 dB fiber to fiber gain |
| 002507 (1993) |
| Sélection de modes d'un laser Fabry-Pérot InGaAsP à 1,5 μm par la transition 4I15/2 → 4I13/2 de Er3+ |
| 002556 (1993) |
| Spectral stabilization of an InGaAsP semiconductor laser by injection-locking |
| 002634 (1993) |
| Lateral thickness modulations in alternate tensile-compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy |
| 000274 (2010) |
| QD laser on InP substrate for 1.55 μm emission and beyond |
| 000312 (2010) |
| High-index-contrast subwavelength grating VCSEL |
| 000328 (2010) |
| Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers |
| 000384 (2009) |
| The effect of hydrostatic pressure on the operation of quantum cascade lasers |
| 000454 (2009) |
| Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers |
| 000505 (2008) |
| Singlemode 1.1 μm InGaAs Quantum Well microstructured Photonic Crystal VCSEL |
| 000536 (2008) |
| Narrow linewidth and demonstration of saturation spectra of the Cesium at 852nm with high power Al-free DFB laser diodes |
| 000570 (2008) |
| High power Al-free DFB laser diode for atomic clocks : narrow linewidth and demonstration of saturation spectra of the Cesium D2 line |
| 000678 (2007) |
| Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs |
| 000687 (2007) |
| Electrooptic properties of InGaAsP asymmetric double quantum wells : Enhanced slope efficiency in waveguide electroabsorption modulators |
| 000729 (2007) |
| All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation |
| 000732 (2007) |
| A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator |
| 000817 (2006) |
| InP based QCL in MBE production machine |
| 000831 (2006) |
| Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL |
| 000863 (2006) |
| 1.3 μm strained InGaAs quantum well VCSELs : operation characteristics and transverse modes analysis |
| 000945 (2005) |
| Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes |
| 000952 (2005) |
| High-power room temperature emission quantum cascade lasers at λ = 9 μm |
| 000963 (2005) |
| GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator |
| 000A20 (2005) |
| Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy |
| 000B21 (2004) |
| Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 μm |
| 000F26 (2002) |
| Sensitive birefringence measurement in a high-finesse resonator using diode laser optical self-locking |
| 000F61 (2002) |
| Nitride-based long-wavelength lasers on GaAs substrates |
| 001089 (2001-07) |
| Croissance et caractérisations des boites quantiques InAs/InP(113)B pour la réalisation d'un laser émettant à 1.55 μm |
| 001090 (2001-07) |
| Contribution à l'ingénierie et à la modélisation d'hétérostructures (Ga,In)(As,P)/GaAs pour diodes lasers |
| 001209 (2001) |
| MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm |
| 001313 (2000-10) |
| Réalisation par épitaxie par jets moléculaires d'une nouvelle structure laser III-V émettant à plus de 3 μm |
| 001442 (2000) |
| High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers |
| 001481 (2000) |
| Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy |
| 001507 (1999-12) |
| Etude de l'effet Stark dans les puits quantiques GaInAs(P)/InP. Application à la déflexion holographique de faisceaux optiques autour de 1,5μm |
| 001665 (1999) |
| Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE |
| 001672 (1999) |
| Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing |
| 001768 (1999) |
| Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces |
| 001A36 (1998) |
| An experimental method for identifying nonlinear phenomena intervening in a FWM process developed in a semiconductor optical amplifier |
| 001C11 (1997) |
| Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions |
| 001C45 (1997) |
| Long-wavelength (9.5-11.5 μm) microdisk quantum-cascade lasers |
| 001D21 (1997) |
| photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity |
| 001E21 (1996-03-15) |
| New III-V semiconductor lasers emitting near 2.6 μm |
| 001F69 (1996) |
| CBE growth of InGaAs(P) alloys using TDMAAs and TBP |
| 002069 (1995-03) |
| Epitaxie localisée par jets chimiques sur substrats GaAs et InP |
| 002078 (1995-01-15) |
| Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques |
| 002103 (1995) |
| Ultra-fast optical switching operation of DBR lasers using an electro-optical tuning section |
| 002126 (1995) |
| Room-temperature crystal structure of the layered phase CuIInIIIP2S6 |
| 002210 (1995) |
| An optical study of interdiffusion in strained InP-based heterostructures |
| 002264 (1994-08-01) |
| High temperature operation of GaInAsSb/AlGaAsSb double-heterostructure lasers emitting near 2.1 μm |
| 002274 (1994-06-27) |
| Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells |
| 002283 (1994-06) |
| Etude par microscopie électronique en transmission de structures laser (GaInAsP/InP) et de la découpe de puits quantiques (GaAs, GaAlAs) par un mécanisme de glissement de dislocations |
| 002324 (1994-01-03) |
| Temperature field determination of InGaAsP/InP lasers by photothermal microscopy: Evidence for weak nonradiative processes at the facets |
| 002363 (1994) |
| Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: constant x vs. constant y |
| 002423 (1994) |
| Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement |
| 002489 (1993-06) |
| Elaboration par LP-MOCVD du système GaAs-GaInP. Application aux composants |
