| 002A06 (1991) |
| MOMBE growth of high quality GaAs/GaInP heterostructures |
| 002A50 (1991) |
| Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures |
| 002C40 (1989) |
| Recent advances in III-V compounds on silicon |
| 002D94 (1988) |
| Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes |
| 003023 (1986) |
| Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE |
| 002708 (1993) |
| Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions |
| 002730 (1993) |
| Carbon doping of GaxIn1-xAs by atmospheric pressure organometallic vapour phase epitaxy |
| 002791 (1992) |
| Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP |
| 002850 (1992) |
| MOCVD growth of CuInSe2 : first results |
| 002895 (1992) |
| Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD |
| 002941 (1991-02) |
| Etude de la croissance du système GaAlInP/GaInP/GaAs par épitaxie en phase vapeur aux organométalliques pour la réalisation de lasers visibles |
| 002A03 (1991) |
| Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P |
| 002A18 (1991) |
| Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers |
| 002A33 (1991) |
| Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence |
| 002B65 (1990) |
| Epitaxial growth of InP/InAs/InP quantum wells |
| 002C19 (1989) |
| Croissance et caractérisation d'hétérostructures GaAs/Ga0,49In0,51P élaborées par LP-MOCVD |
| 002C20 (1989) |
| Croissance et caractérisation d'alliages GaInAsP de gaps égaux à 1,3 et 1,15 μm élaborés par LP-MOCVD |
| 002C26 (1989) |
| Very uniform epitaxy |
| 002C31 (1989) |
| Substrate-driven ordering microstructure in GaxIn1-xP alloys |
| 002E75 (1987) |
| Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy |
| 002F05 (1987) |
| Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition |
| 003055 (1985) |
| Hétérostructures multicouches pour photodétecteurs dans la gamme 1,3 à 1,6 microns |
| 003107 (1984) |
| Metalorganic InP and InxGa1-xAsyP1-y on InP epitaxy at atmospheric pressure |
| 001C07 (1997) |
| Spatially resolved optical of spectroscopy of GaAs islands on InAs (111) |
| 002269 (1994-07) |
| Elaboration par E.P.V.O.M. d'un photodétecteur A Ga1-xInxSb et Ga1-xInxAsySb1-y pour télécommunications à plus de deux micromètres |
| 002498 (1993-03) |
| Dopage indium d'hétérostructures CdTe/CdZnTe en Epitaxie par Jets moléculaires |
| 002617 (1993) |
| Monolayer scale study of segregation effects in InAs/GaAs heterostructures |
| 002648 (1993) |
| Indium doping of (001), (111) and (211) CdTe layers grown by molecular beam epitaxy |
| 002650 (1993) |
| InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy |
| 002691 (1993) |
| Electrical properties of P-rich InP grown by gas source MBE |
| 002743 (1993) |
| A new organoindium precursor for electronic materials |
| 002747 (1993) |
| A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology |
| 002790 (1992) |
| Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP |
| 002815 (1992) |
| Reflection high-energy electron diffraction studies of InSe and GaSe layered compounds grown by molecular beam epitaxy |
| 002849 (1992) |
| MOVPE growth Ga0.6In0.4Sb photodiodes for 5.55 μm detection |
| 002874 (1992) |
| InGaSb/GaSb photodiodes growth by MOVPE |
| 002916 (1992) |
| Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers |
| 002925 (1992) |
| Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation |
| 002960 (1991) |
| Unintentional hydrogen incorporation in crystals |
| 002961 (1991) |
| Uniformity-optical properties of GaInP-GaAlInP layers grown by MOVPE |
| 002975 (1991) |
| Strain induced 2D-3D growth mode transition in molecular beam epitaxy of InxGa1-xAs on GaAs (001) |
| 002A23 (1991) |
| High quality InP and In1-xGaxAsyP1-y grown by gas source MBE |
| 002A36 (1991) |
| Experimental and theoretical study of InP homoepitaxy by chemical vapour deposition from gaseous indium chloride and hydrogen diluted phosphine |
| 002A65 (1991) |
| Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties |
| 002B40 (1990) |
| Kinetic processes in epitaxy of GaxIn1-xAs on InP(100) by hydride vapour phase epitaxy |
| 002C21 (1989) |
| Couches d'InP de très haute pureté obtenues par croissance en phase vapeur par la méthode des organométalliques |
| 002C24 (1989) |
| Analyse des conditions de croissance de GaxIn1-xAs/InP par la méthode aux hydrures |
| 002C39 (1989) |
| Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure |
| 002D32 (1988) |
| Thermodynamic analysis of the molecular beam epitaxy of AlInAs alloys |
| 002D49 (1988) |
| Role of elastic strain and relaxation on the molecular-beam epitaxial growth of III-V alloy pseudomorphic layers |
| 002D91 (1988) |
| High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition |
| 002D95 (1988) |
| Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy |
| 002E21 (1988) |
| Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy |
| 002E23 (1988) |
| Characterization of SrF2 thin films and of SrF2/InP structures |
| 002E32 (1987) |
| Préparation d'hétérostructures Ga In As Sb / Ga Sb émettant à 2,5 μm |
| 002E34 (1987) |
| Dépôts en couches épaisses de InGaP en InGaAlP sur GaAs ; étude des hétérostructures ; étude du dopage |
| 002E79 (1987) |
| Strain-induced In incorporation coefficient variation in the growth of Al1-x Inx as alloys by molecular beam epitaxy |
| 002F11 (1987) |
| Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy |
| 002F24 (1987) |
| Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-xAs and GaxIn1-xAs epitaxial layers grown by molecular beam epitaxy |
| 002F82 (1986) |
| The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium |
| 003043 (1986) |
| Approach of the interplay between kinetics and diffusion in hot wall reactors used in V.P.E. of III-V compounds |
| 001796 (1998-12) |
| ELABORATION D'HETEROSTRUCTURES A BASE D'ANTIMONIURES. ETUDE ET OPTIMISATION DE LA FORMATION DES INTERFACES InAs/GaSb ET GaSb/InAs |
| 001C59 (1997) |
| InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics |
| 001D31 (1996-12) |
| Croissance par épitaxie par jets moléculaires d'hétérostructures à dopage planaire pour application aux transistors HEMT |
| 001F95 (1995-12) |
| Epitaxie de terres rares sur semi-conducteurs II-VI CdTe et CdZnTe: croissance, dopage et caractérisation électrique |
| 002251 (1994-10) |
| Dépôt par MOCVD de couches minces de CuInSe2 pour la conversion photovoltaïque de l'énergie solaire |
| 002405 (1994) |
| GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits |
| 002530 (1993) |
| Thermodynamic analysis of molecular beam epitaxy of compounds in the In-Se system |
| 002539 (1993) |
| Study of the heterointerfaces InSe on GaSe and GaSe on InSe |
| 002592 (1993) |
| Optical studies of InP/InAlAs/InP interface recombinations |
| 002629 (1993) |
| Low spectral chirp and large electroabsorption in a strained InGaAsP/InGaAsP multiple quantum well modulator |
| 002639 (1993) |
| Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence |
| 002645 (1993) |
| Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE |
| 002653 (1993) |
| Improvement of the growth of InxGa1-xAs on GaAs (001) using Te as surfactant |
| 002658 (1993) |
| High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature |
| 002662 (1993) |
| Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy |
| 002663 (1993) |
| Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb |
| 002668 (1993) |
| Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm |
| 002680 (1993) |
| Epitaxy of layered semiconductor thin films |
| 002715 (1993) |
| Critical analysis of the thermodynamic properties of the In-Se gaseous and solid phases |
| 002752 (1993) |
| 1.55 μm buried ridge stripe laser diodes grown by gas source molecular beam epitaxy |
| 002803 (1992) |
| Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001) |
| 002854 (1992) |
| Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs |
| 002856 (1992) |
| Investigations of MOCVD-grown AllnAs-InP type II heterostructures |
| 002882 (1992) |
| Highly thermally stable, high-performance InGaAsP : InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE |
| 002886 (1992) |
| High power, 0.98 μm, Ga0.8As/GaAs/Ga0.51In0.49P multiple quantum well laser |
| 002893 (1992) |
| Growth and characterization of type-II/type-I AlGaInAs/InP interfaces |
| 002914 (1992) |
| Determination of electrical and optical parameters of Ga1-xInxAsySb1-y and Ga1-xAlxAsySb1-y thin layers grown on GaSb substrates by IR reflectivity |
| 002919 (1992) |
| Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy |
| 002929 (1992) |
| Can oxidation prevent nucleation studies of indium cluster deposition in a classical vacuum system ? |
| 002973 (1991) |
| Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source |
| 002A01 (1991) |
| Modulated molecular beam epitaxy : a successful route toward high quality highly strained heterostructures |
| 002A47 (1991) |
| Electrical and structural characterization of GaAs on InP grown by OMCVD ; application to GaAs MESFETs |
| 002A96 (1990) |
| Thermodynamic analysis of molecular beam epitaxy of III-V compounds ; application to the GayIn1-yAs multilayer epitaxy |
| 002B01 (1990) |
| The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD |
| 002B35 (1990) |
| MOMBE growth of high-quality InP and GalnAs bulk, heterojunction and quantum well layers |
| 002B54 (1990) |
| High-purity InP growth by grass sources molecular beam epitaxy (Gsmbe) |
| 002B85 (1990) |
| Chemical beam epitaxy of indium phosphide |
| 002C48 (1989) |
| Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment |
| 002C58 (1989) |
| Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP |
