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| Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1-xN |
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| 001524 (1999-10) |
| Études optiques de GaN et d'InGaN |
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| 001283 (2001) |
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| SPECTROSCOPIE OPTIQUE DE COUCHES MASSIVES DE GaN ET D'HETEROSTRUCTURES (In,Ga)N/GaN |
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| 001674 (1999) |
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| 001765 (1999) |
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| 001813 (1998-11) |
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| 001952 (1998) |
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| 001B26 (1997-06) |
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| 001C75 (1997) |
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| 002001 (1995-11) |
| Spectroscopies de modulation optique: développement d'un ensemble expérimental et application à la caractérisation de matériaux et d'hétérostructures du système GaInAs/AlInAs épitaxié sur substrat InP |
| 002169 (1995) |
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| 002274 (1994-06-27) |
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| 002298 (1994-04-15) |
| Defect-assisted apparent lowering of band offsets |
| 002389 (1994) |
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| 002415 (1994) |
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| 000154 (2011) |
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| 000249 (2011) |
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| 000672 (2007) |
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| 000860 (2006) |
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| 000A18 (2005) |
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| 000B56 (2004) |
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| 000B86 (2004) |
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| Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress |
