Documents par ordre de pertinence

000411 (2009)		Optical, structural investigations and band-gap bowing parameter of GaInN alloys
000421 (2009)		MOVPE growth of InN buffer layers on sapphire
000438 (2009)		InN excitonic deformation potentials determined experimentally
000452 (2009)		Growth of InN films and nanostructures by MOVPE
000474 (2009)		Alternative precursors for MOVPE growth of InN and GaN at low temperature
001335 (2000-05-01)		InAs(PSb)-based W quantum well laser diodes emitting near 3.3 μm
000260 (2010)		The structure of InAlN/GaN heterostructures for high electron mobility transistors
001146 (2001)		Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs

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