Documents par ordre de pertinence

001543 (1999-08-15)		High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)
001706 (1999)		Local stress in highly strained coherent InGaAs islands
001A33 (1998)		Atomic-scale mapping of local lattice distortions in highly strained coherent islands of InxGa1-xAs/GaAs by high-resolution electron microscopy and image processing
001D19 (1997)		2D-3D transition in highly strained GaAs/Ga1-xInxAs heterostructures by transmission electron microscopy
001F59 (1996)		Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures
002653 (1993)		Improvement of the growth of InxGa1-xAs on GaAs (001) using Te as surfactant
002044 (1995-06-19)		Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures
002060 (1995-04)		Etude par microscopie électronique en transmission de la relaxation des contraintes dans les hétérostructures GaInAs/GaAs fortement désadaptées
002E64 (1987)		Two-dimensional defects in InSe

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