Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster G. Bastard - R. Ferreira

Terms

31G. Bastard
33R. Ferreira
7O. Verzelen
15Y. Guldner
5S. Hameau

Associations

Freq.WeightAssociation
2424G. Bastard - R. Ferreira
77O. Verzelen - R. Ferreira
77G. Bastard - O. Verzelen
66R. Ferreira - Y. Guldner
55S. Hameau - Y. Guldner
55R. Ferreira - S. Hameau
Documents par ordre de pertinence
000E78 (2002-02-15) Far-infrared magnetospectroscopy of polaron states in self-assembled InAs/GaAs quantum dots
000F42 (2002) Polarons and energy relaxation in quantum dots
001515 (1999-11-15) Strong Electron-Phonon Coupling Regime in Quantum Dots: Evidence for Everlasting Resonant Polarons
000951 (2005) Hole-LO phonon interaction in InAs/GaAs quantum dots
000D70 (2003) Far-infrared probe of size dispersion and population fluctuations in doped self-assembled quantum dots
000D74 (2003) Excitonic polarons in semiconductor quantum dots
000E70 (2002-04-08) Excitonic Polarons in Semiconductor Quantum Dots
000F43 (2002) Polaron effects in quantum dots
001082 (2001-08-15) Polaron coupling in quantum dot molecules
000150 (2011) Time resolved spectroscopy on quantum dots and graphene at the FELBE free-electron laser
000427 (2009) Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots
000873 (2005) The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots
000979 (2005) Electronic continuum states and far-infrared absorption of InAs/GaAs quantum dots
000B32 (2004) Intraband relaxation via polaron decay in InAs self-assembled quantum dots
000B88 (2004) Alloy effects in Ga1-xInxN/GaN heterostructures
000C04 (2003-12-15) Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots
000C05 (2003-12-15) Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots
000E19 (2002-11-18) Continuous Absorption Background and Decoherence in Quantum Dots
000E24 (2002-11-11) Optically Driven Spin Memory in n-Doped InAs-GaAs Quantum Dots
000E40 (2002-08-15) Imaging of the electronic states of self-assembled InxGa1-xAs quantum dots by scanning tunneling spectroscopy
001027 (2002) Electric field effects in stacked dots
001329 (2000-07-15) Effects of quantum mechanical coupling on the optical properties of vertically stacked V-groove quantum wires
001574 (1999-05-10) Phonon-assisted capture and intradot Auger relaxation in quantum dots
001712 (1999) Intra-dot Auger relaxation in quantum dots
002654 (1993) Hole "spin" relaxation in semiconductor quantum wells
002B04 (1990) Superlattice under parallel electric and magnetic fields
002B69 (1990) Electronic properties of Ga(In)As-based heterostructures
000886 (2005) Study of correlation effects on stability of many-body complexes in III-V nitride quantum dots
000959 (2005) Ground state transition energies in biased InAs/GaAs quantum dots
001659 (1999) Spin-splitting of the subbands of InGaAs-InP and other 'no common atom' quantum wells
001818 (1998-10-15) Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect
001844 (1998-07-15) Excitonic states of weakly confining quantum wires
001B03 (1997-07-15) Optical probing of interface roughness in resonant tunneling structures
001F20 (1996) Inter-landau level tunneling in an InGaAs/AlAs/GaAs structure under tilted magnetic field
001F70 (1996) Binding energies of excitons and charged excitons in GaAs/Ga(In)As quantum dots
001F94 (1995-12) Etude et réalisation de transistors HEMT AlInAs/GaInAs/InP pour circuits opto-électroniques à hauts débits
002037 (1995-07-10) High performance polarization insensitive electroabsorption modulator based on strained GaInAs-AlInAs multiple quantum wells
002263 (1994-08-01) Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs
002274 (1994-06-27) Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells
002301 (1994-04) Elaboration d'une technologie planar par reprise d'épitaxie sélective par jets chimiques pour TBH GaInP/GaAs
002435 (1994) Calculation of the energy levels in InAs/GaAs quantum dots
002466 (1993-11) Effet tunnel et magnéto-tunnel dans les hétérostructures à double barrière à base de semiconducteurs III-V
002B71 (1990) Electron minibands and Wannier-Stark quantization in an Ino0.15Ga0.85As-GaAs strained-layer superlattice
002C76 (1989) Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition
002F21 (1987) First observation of quantum Hall effect in a GaInAsP-InP heterostructure grown by metalorganic chemical vapor deposition
002F45 (1987) Cyclotron resonance investigations in GaInAs(P)/InP heterojunctions grown by low-pressure metal-organic chemical vapour deposition
002F79 (1986) Transient photovoltaic effect in semiconductor superlattices
002F99 (1986) Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands
003066 (1985) Self-consistent calculations of charge transfer and alloy scattering-limited mobility in InP-Ga1-xInxAsyP1-y single quantum wells
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024