Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster I. Prevot - X. Marcadet

Terms

8I. Prevot
17X. Marcadet
15B. Vinter

Associations

Freq.WeightAssociation
77I. Prevot - X. Marcadet
77B. Vinter - X. Marcadet
Documents par ordre de pertinence
000E27 (2002-10-28) Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
001061 (2001-11-15) Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices
001117 (2001-02-19) InAs/AlSb quantum-cascade light-emitting devices in the 3-5 μm wavelength region
001208 (2001) MBE growth of room-temperature InAsSb mid-infrared detectors
000D16 (2003) Optimization, design and fabrication of a non-cryogenic quantum infrared detector
000D49 (2003) Indium surface segregation in AlSb and GaSb
001188 (2001) Optical and structural investigation of InAs/AlSb/GaSb heterostructures
001275 (2001) Characterisation and optimisation of MBE grown arsenide/antimonide interfaces
001327 (2000-07-17) Room temperature InAsSb photovoltaic midinfrared detector
001415 (2000) Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb
000767 (2006) Structural characterisation of Sb-based heterostructures by X-ray scattering methods
000B23 (2004) Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
000C96 (2003) Strategy for the design of a non-cryogenic quantum infrared detector
000D52 (2003) InAs/AlSb quantum cascade lasers operating at 6.7 μm
000E46 (2002-07-15) Auger recombination in narrow-gap semiconductor superlattices
001234 (2001) In situ etching at InGaAs/GaAs quantum well interfaces
001717 (1999) Indium surface segregation in strained GaInAs quantum wells grown on (1 1 1) GaAs substrates by MBE
001996 (1998) High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
001A45 (1997-12-29) Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser
001B03 (1997-07-15) Optical probing of interface roughness in resonant tunneling structures
001F20 (1996) Inter-landau level tunneling in an InGaAs/AlAs/GaAs structure under tilted magnetic field
002135 (1995) Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates
002292 (1994-05-01) Resonant tunneling structures with local potential perturbations
002652 (1993) In situ core-level photoelectron spectroscopy study of indium segregation at GaInAs/GaAs heterojunctions grown by molecular-beam epitaxy
002665 (1993) Giant photovoltage of semiconductor heterostructures
002877 (1992) In0.1Ga0.9As/GaAs/AlAs pseudomorphic resonant tunneling diodes integrated with airbridge
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024