Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster J. Camassel - S. Juillaguet

Terms

18J. Camassel
7S. Juillaguet
6R. Schwedler
6K. Wolter
6H. Peyre
8J. P. Laurenti
6R. W. Glew

Associations

Freq.WeightAssociation
77J. Camassel - S. Juillaguet
66J. Camassel - R. Schwedler
66J. Camassel - K. Wolter
66H. Peyre - J. Camassel
55K. Wolter - S. Juillaguet
55J. P. Laurenti - K. Wolter
55J. Camassel - R. W. Glew
55J. Camassel - J. P. Laurenti

Documents par ordre de pertinence
002614 (1993) Morphology of InGaAs/InP QWs : from excitonic spectroscopy to HR-TEM analyses
002639 (1993) Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
002664 (1993) Growth and characterization of In0.53Ga0.47As/InxGa1-xAs strained-layer superlattices
002679 (1993) Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells
002591 (1993) Optical tools for intermixing diagnostic : application to InGaAs/InGaAsP microstructures
002608 (1993) Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces : photoluminescence vs. Raman
002A33 (1991) Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence
002363 (1994) Quantitative investigation of interdiffusion effects in balanced-strain InGaAs(P)/InGaAsP heterostructures: constant x vs. constant y
002531 (1993) Thermal stability of InGaAs/InGaAsP quantum wells
002B24 (1990) Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE
001A10 (1998) Ellipsometric characterisation of ordered Ga0.5In0.5P
001D89 (1996-06-15) Shallow strained InxGa1-xAs/InyGa1-yAs superlattices embedded in p-i-n diodes: Structural properties and optical response
002348 (1994) Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications
002699 (1993) Effect of thermal diffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum wells
000907 (2005) Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs
001241 (2001) Growth of bulk and superlattice GaAsSb layers on InP
001A27 (1998) Bridgman solidification of GaSb in space
001D08 (1997) Band structure of very narrow InGaAs/InP quantum wells with gradual interface effects
001E60 (1996) Valence band structure of very narrow InGaAs/InP quantum wells
002002 (1995-11) Propriétés structurales et optiques des superréseaux InGaAs/InGaAs: mise en évidence d'une modulation tout optique
002016 (1995-10) Effets d'interdiffusion sur les hétérostructures III-V
002858 (1992) Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024