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Serveur d'exploration sur l'Indium

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Le cluster J. Decobert - N. Lagay

Terms

26J. Decobert
7N. Lagay
19G. Post

Associations

Freq.WeightAssociation
77J. Decobert - N. Lagay
55G. Post - J. Decobert
Documents par ordre de pertinence
000045 (2013) Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits
000193 (2011) New InGaAs SWIR imaging solutions from III-VLab
000522 (2008) Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4
000589 (2008) Demonstration of planar thick InP layers by selective MOVPE
000659 (2007) Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000A74 (2004) Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
000B20 (2004) MOVPE growth of A1GaInAs-InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers
000B96 (2004) 42 GHz bandwidth InGaAlAs/InP electro absorption modulator with a sub-volt modulation drive capability in a 50 nm spectral range
001032 (2002) DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
001050 (2002) A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond
001634 (1999) Triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
001A19 (1998) Doping optimizations for InGaAs/InP composite channel HEMTs
000020 (2013) Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer
000541 (2008) Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy
000859 (2006) All-optical extinction-ratio enhancement of a 160 GHz pulse train by a saturable-absorber vertical microcavity
000A95 (2004) Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices
000B99 (2003-12-29) Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm
000D62 (2003) Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions
000D78 (2003) Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
001224 (2001) Inductively coupled plasma -- plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)
001291 (2001) (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001343 (2000-03-01) Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
001410 (2000) Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001411 (2000) Output conductance dispersion and drain current transients in InP-HFETs: Observations and equivalent circuit model
001590 (1999-02-15) Oxide confining layer on an InP substrate
001670 (1999) Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001969 (1998) New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's
001B67 (1997) HEMT à canal composite GaInAs/InP pour circuits de modulation optique
001B83 (1997) Uniform InAlAs/InP HFET fabricated using selective dry recess etching
001B86 (1997) UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation
001C93 (1997) Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
001E49 (1996) Les transistors à effet de champ à hétérostructure sur InP
001F10 (1996) Low excess noise of InAlAs/InP HFETs fabricated using selective dry recess etching
002045 (1995-06-15) Acoustical and optical properties of Ga0.52In0.48P: A Brillouin scattering study
002370 (1994) Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures
002526 (1993) UVCVD dielectric films for InP-based optoelectronic devices
002823 (1992) Passivation of InP using In(PO3)3-condensed phosphates : from oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices
002893 (1992) Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
002A50 (1991) Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
002A78 (1990) Silice UVCVD pour transistors MISFET autoalignés sur InP
Wicri

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