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Serveur d'exploration sur l'Indium

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Le cluster B. Gruzza - L. Bideux

Terms

39B. Gruzza
28L. Bideux
12Z. Benamara
11C. Robert
9V. Matolin
6C. Robert-Goumet
7B. Akkal
5M. Petit

Associations

Freq.WeightAssociation
2626B. Gruzza - L. Bideux
1212B. Gruzza - Z. Benamara
1010B. Gruzza - C. Robert
99L. Bideux - Z. Benamara
99L. Bideux - V. Matolin
99C. Robert - L. Bideux
99B. Gruzza - V. Matolin
66C. Robert-Goumet - L. Bideux
66B. Akkal - Z. Benamara
66B. Akkal - L. Bideux
66B. Akkal - B. Gruzza
55M. Petit - V. Matolin
55L. Bideux - M. Petit
55C. Robert - Z. Benamara
Documents par ordre de pertinence
000711 (2007) Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)- : Effect of annealing at 450 °C
000795 (2006) Nitridation of InP(1 0 0) substrates studied by XPS spectroscopy and electrical analysis
000908 (2005) Passivation of InP(100) substrates : first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies
000B80 (2004) Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
001462 (2000) Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
001E70 (1996) Study of Al2O3 condensation on Si(100) and InP(100) substrates
000924 (2005) Nitridation of InP(100) surface studied by synchrotron radiation
000D68 (2003) First stages of the InP(1 0 0) surfaces nitridation studied by AES, EELS and EPES
001195 (2001) Nitridation of InP(100) surface studied by AES and eels spectroscopies
001484 (2000) Angular distribution of electrons elastically reflected from polycrystalline metals (Pd, In)
001744 (1999) Electrical study of the Au/InSb/InP system
001746 (1999) Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
001763 (1999) Characterization of the M.S structure by the surface photoelectrical voltage method
001970 (1998) Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
001C81 (1997) Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates
000403 (2009) SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering
000450 (2009) Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000671 (2007) Interaction of hydrogen with InN thin films elaborated on InP(100)
000F12 (2002) Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy
001262 (2001) Effect of InSb buffer layer in MIS structures based on InP
001735 (1999) Experimental determination of the inelastic mean free path of electrons in GaSb and InSb
001936 (1998) Some applications of elastic peak electron spectroscopy for semiconductor surface studies
001960 (1998) Passivation of III-V compounds used for metal-insulator, InP(100) structures
000137 (2012) Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing
000C89 (2003) Study and improvement of interfacial properties in a MIS structure based on p-type InP
001192 (2001) Numerical analysis of forward I-V characteristics of Au/InP interface restructured by antimony
001738 (1999) Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE
001D16 (1997) A study of InP(100) surface passivation by antimony deposition
002343 (1994) The interaction of hydrogen with the InP(100) substrates studied by AES, elastic peak electron spectroscopy (EPES) and EELS
002545 (1993) Structural and electrical study of and systems
000497 (2008) Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
000763 (2006) Studies of gas sensing, electrical and chemical properties of n-InP epitaxial surfaces
000B90 (2004) Adhesive properties of silicone polymers on some typical opto-electronic substrates: influence of the network density
000D03 (2003) Rigorous analysis of the electronic properties of InP interfaces for gas sensing
001D47 (1996-10) Propriétés des couches minces de silicium poreux et d'alumine utilisées pour la microélectronique. Etude par spectroscopies électroniques, ellipsométrie laser et caractérisations électriques C(V)
002311 (1994-02-14) Sb-induced interatomic bond distance stabilization on InP(100) surface
002445 (1994) AES and EELS analysis of the interaction between phosphorus and metallic indium
002546 (1993) Structural and electrical characterizations of Ag-InP(100) interfaces stabilized by antimony
002564 (1993) Sb-induced surface stabilization of InP(100) wafer beyond 500°C
002922 (1992) Contribution of EPES in the study of materials
002F53 (1987) An AES and ELS study of InP(100) surface subjected to argon ion bombardment
003050 (1986) A study by elastically reflected electrons of InP (100) substrates previously ion bombarded
003076 (1985) Effect of ion bombardment at low energy on (100)InP surfaces, studied by Auger electron spectroscopy
Wicri

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