Le cluster O. Parillaud - S. Bansropun
| 000536 (2008) | Narrow linewidth and demonstration of saturation spectra of the Cesium at 852nm with high power Al-free DFB laser diodes | |
| 000570 (2008) | High power Al-free DFB laser diode for atomic clocks : narrow linewidth and demonstration of saturation spectra of the Cesium D2 line | |
| 000654 (2007) | Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications | |
| 000820 (2006) | High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications | |
| 000860 (2006) | Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications | |
| 000741 (2006) | Lasers à boîtes quantiques sur InP à 1,55μm présentant en fonctionnement continu une puissance élevée, un très faible bruit et une longue durée de vie | |
| 000947 (2005) | InP based lasers and optical amplifiers with wire-/dot-like active regions : Self-Organized Quantum Dots | |
| 000513 (2008) | RECENT DEVELOPMENTS OF InP-BASED QUANTUM DASHES FOR DIRECTLY MODULATED LASERS AND SEMICONDUCTOR OPTICAL AMPLIFIERS | |
| 000767 (2006) | Structural characterisation of Sb-based heterostructures by X-ray scattering methods | |
| 000F78 (2002) | Measurement of gain spectra, refractive index shift and linewidth enhancement factor in Al-free 980 nm lasers with broadened waveguide | |
| 001975 (1998) | Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application | |
| 001982 (1998) | Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy | |
| 001E01 (1996-05-06) | High quality InP on Si by conformal growth | |
| 001F07 (1996) | Low temperature behaviour of laser diodes | |
| 002378 (1994) | Microwave components and subassemblies for millimeter wave applications | |
| 002D25 (1988) | Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD | |
| 002F50 (1987) | CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition | |
| 003092 (1984) | cw operation of 1.57-μm GaxIn1-xAsyP1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition | |
| 003122 (1984) | CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD |
| This area was generated with Dilib version V0.5.77. |  |