Le cluster P. Viktorovitch - X. Letartre
| 000851 (2006) | Compact Photonic devices based on 1D and 2D photonic crystal broadband reflectors | |
| 000A71 (2004) | Surface operation photonic devices based on two dimensional InP membrane photonic crystals | |
| 000C11 (2003-11) | 3D structuring of multilayer suspended membranes including 2D photonic crystal structures | |
| 000C72 (2003) | Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon | |
| 000011 (2013) | Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene | |
| 000366 (2010) | 3D harnessing of light with photon cage | |
| 000635 (2007) | Photonic crystal slab reflectors for compact passive and active optical devices | |
| 000C64 (2003-01-01) | Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane | |
| 000E13 (2002-12-30) | InP-based two-dimensional photonic crystal on silicon: In-plane Bloch mode laser | |
| 000E33 (2002-09-01) | Propagation losses of the fundamental mode in a single line-defect photonic crystal waveguide on an InP membrane | |
| 000E79 (2002-02-01) | Near-field probing of active photonic-crystal structures | |
| 000E88 (2002) | Microlasers à cristaux photoniques en InP reporté sur silicium | |
| 001228 (2001) | InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6μm | |
| 001229 (2001) | InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 μm | |
| 001274 (2001) | Characterisation of 2D photonic crystals cavities on InP membranes | |
| 001432 (2000) | InP-based MOEMS and related topics | |
| 001C31 (1997) | Optical characterization methods of InP based micro-opto-electro-mechanical systems | |
| 001C57 (1997) | InP-based micro-mechanical tunable and selective photodetector for WDM systems | |
| 001F09 (1996) | Low frequency noise sources in InAlAs/InGaAs MODFET's | |
| 000871 (2005) | Tuning a two-dimensional photonic crystal resonance via optical carrier injection | |
| 000960 (2005) | Grating enhanced MOEMS : a novel class of beam steering devices | |
| 001294 (2000-12-01) | InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation | |
| 001688 (1999) | Optical and mechanical design of an InP based tunable detector for gas sensing applications | |
| 001783 (1999) | 2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector | |
| 001994 (1998) | Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications | |
| 001995 (1998) | Highly selective 1.55 μm InP/air gap micromachined Fabry-Perot filter for optical communications | |
| 001C42 (1997) | Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of Schottky diodes | |
| 001E73 (1996) | Stability and noise of Pd-Ge-Ag-Au ohmic contacts to InGaAs-InAlAs high electron mobility transistors | |
| 001F42 (1996) | Fabrication of InP-based freestanding microstructures by selective surface micromachining | |
| 002031 (1995-08-28) | Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP | |
| 002D59 (1988) | Photoluminescence enhancement of InP treated with activated hydrogen | |
| 000580 (2008) | Electrically injected InP microdisk lasers integrated with nanophotonic SOI circuits | |
| 000F48 (2002) | Phase matching pseudo-resonant tunable InP-based MOEMS | |
| 000F70 (2002) | Monolithic tunable InP-based vertical cavity surface emitting laser | |
| 001466 (2000) | Design and fabrication of optical microcavities using III-V semiconductor-based MOEMS | |
| 001583 (1999-04-05) | Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III-V semiconducting overhanging beams | |
| 001639 (1999) | The strength of surface micromachined indium phosphide devices evaluated by Weibull analysis of tensile and bending tests | |
| 001696 (1999) | NIR resonant cavity enhanced InP/InGaAs strained quantum well inter-band photo-detector | |
| 001724 (1999) | Highly tunable and selective fabry Perot filter based on InP-air Bragg mirrors for W.D.M. applications | |
| 001A87 (1997-09-15) | Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties | |
| 001B94 (1997) | The strength of indium phosphide based microstructures | |
| 002945 (1991) | Rôle de la zone interfaciale dans la qualité des propriétés électriques du système Al2O3/AsInP | |
| 002B00 (1990) | The passivation of InP by arsenic surface stabilization and Al2O3 deposition : correlations between interface chemistry and capacitance measurements | |
| 002E46 (1987) | Passivation de la surface de phosphure d'indium par des éléments de la colonne V | |
| 002F27 (1987) | Evidence of electron induced interfacial defects in electron-gun-deposited insulator InP structures | |
| 003027 (1986) | Electronical properties of metal-insulator-semiconductor devices prepared on thermally treated InP in Phosphorus overpressure | |
| 000008 (2013) | Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals | |
| 000968 (2005) | Feasibility of III-V on-silicon strain relaxed substrates | |
| 000B49 (2004) | Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates | |
| 001358 (2000-01) | InP-based photonic micro-sensor for near field optical investigations | |
| 001501 (1999-12-06) | High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach | |
| 001622 (1999) | Les super-réseaux de monocouches fractionnaires (InAs)n/(GaAs)0.26 épitaxiés sur InP par EJMSS pour les applications dans la gamme spectrale 2-2.5μm | |
| 001921 (1998) | Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets | |
| 001D59 (1996-09-01) | Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma | |
| 001F73 (1996) | Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension | |
| 002072 (1995-02-15) | High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions | |
| 002114 (1995) | Surface chemistry of InAlAs after (NH4)2Sx sulphidation | |
| 002136 (1995) | Photoluminescence and band offsets of AlInAs/InP | |
| 002188 (1995) | Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements | |
| 002272 (1994-07) | Optical properties of InAs/InP surface layers formed during the arsenic stabilization process | |
| 002298 (1994-04-15) | Defect-assisted apparent lowering of band offsets | |
| 002518 (1993) | Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm | |
| 002598 (1993) | Optical properties and fluctuations of composition in Ga0.77In0.23As0.19Sb0.81 alloys | |
| 002823 (1992) | Passivation of InP using In(PO3)3-condensed phosphates : from oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices | |
| 002892 (1992) | Growth of passivating UV/ozone oxides on InP : correlations between chemical composition and intefacial electrical properties | |
| 002963 (1991) | Tunnel deep level transient spectroscopy on a single quantum well | |
| 002984 (1991) | Preparation electrical properties and interface studies of plasma nitride layers on n-type InP | |
| 002A71 (1991) | Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy | |
| 002A79 (1990) | Passivation des semiconducteurs III-V | |
| 002F88 (1986) | Study of InP surface treatments by scanning photoluminescence microscopy | |
| 003007 (1986) | New native oxide of InP with improved electrical interface properties | |
| 003040 (1986) | Characterization of the InP surface by photoluminescence imaging |
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