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Serveur d'exploration sur l'Indium

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Le cluster P. S. Mangat - P. Soukiassian

Terms

8P. S. Mangat
17P. Soukiassian
15G. Le Lay
7V. Yu. Aristov
5Z. Hurych

Associations

Freq.WeightAssociation
88P. S. Mangat - P. Soukiassian
77G. Le Lay - V. Yu. Aristov
77G. Le Lay - P. Soukiassian
66P. Soukiassian - V. Yu. Aristov
55P. Soukiassian - Z. Hurych
Documents par ordre de pertinence
001407 (2000) Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
001E81 (1996) Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
002143 (1995) Na/InAs(110) interface formation at RT
002404 (1994) Giant band bending and interface formation of Cs/InAs(110) zt room temperature
001535 (1999-09-15) Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
002368 (1994) Photoemission extended X-ray absorption fine structure (PEXAFS): a new approach to probe surface and interface atomic geometry
002444 (1994) Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum
002564 (1993) Sb-induced surface stabilization of InP(100) wafer beyond 500°C
002575 (1993) Polarization-dependent photoemission EXAFS investigation of the InP(110) surface structure
001912 (1998) Two-dimensional electron gas at InAs(100)1 x 2/1 x 4 Pb
001D16 (1997) A study of InP(100) surface passivation by antimony deposition
002273 (1994-07) Cs-induced highest EF jump above InAs(110) conduction-band minimum
002311 (1994-02-14) Sb-induced interatomic bond distance stabilization on InP(100) surface
002B88 (1990) Catalytic nitridation of a III-V semiconductor using alkali metal
000346 (2010) Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
000500 (2008) Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(100) substrate
000640 (2007) Pb induced charge accumulation on InAs(111)B
000C45 (2003-04-14) Self-assembled molecular chains formed by selective adsorption of lead-phthalocyanine on InSb(100)-(4×2)/c(8×2)
001153 (2001) Structure, electronics and dynamics of clean and metal adsorbed semiconductor surfaces: recent results and perspectives
001212 (2001) Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy
001561 (1999-06-15) Atomic structure of the As-rich InAs(100) β2(2×4) surface
002357 (1994) Sodium or cesium-assisted nitrogen monoxide reaction win InP(110) at ambient temperature
002666 (1993) Giant band bending induced by Ag on InAs(110) surfaces at low temperature
002686 (1993) Electronic properties of cleaved (110) and MBE-grown (100) InAs surfaces, clean and covered with an ultra-thin Ag adlayer
002817 (1992) Rb- and K-promoted nitridation of cleaved GaAs and InP surfaces at room temperature
Wicri

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