Le cluster C. Delalande - G. Cassabois
| 000E32 (2002-10-07) | Interferometric correlation spectroscopy in single quantum dots | |
| 000E44 (2002-07-15) | Line narrowing in single semiconductor quantum dots: Toward the control of environment effects | |
| 000E69 (2002-04-15) | Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples | |
| 000E83 (2002-01-15) | Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots | |
| 001044 (2002) | Anti-stokes photoluminescence in self-assembled InAs/GaAs quantum dots | |
| 001062 (2001-11-12) | Photoluminescence Up-Conversion in Single Self-Assembled InAs/GaAs Quantum Dots | |
| 000962 (2005) | Giant optical anisotropy in single InAs quantum dots | |
| 000C05 (2003-12-15) | Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots | |
| 001C04 (1997) | Strong-coupling regime in pillar semiconductor microcavities | |
| 001C17 (1997) | Relaxation of microcavity polariton | |
| 001E79 (1996) | Self-organized growth of InAs/GaAs quantum boxes | |
| 001F26 (1996) | InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications | |
| 002A01 (1991) | Modulated molecular beam epitaxy : a successful route toward high quality highly strained heterostructures | |
| 002B79 (1990) | Differentiation of the non radiative recombination properties of the two interfaces of MBE grown GaAs-GaAlAs quantum wells | |
| 002C35 (1989) | Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy | |
| 002C49 (1989) | Optical investigation of the band structure of InAs/GaAs short-period superlattices | |
| 002D92 (1988) | High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy | |
| 000400 (2009) | Single photon sources using InAs/InP quantum dots | |
| 000526 (2008) | One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications | |
| 000736 (2007) | 1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots-three candidates as active material | |
| 000A77 (2004) | Spin dynamics in undoped and n-doped InAs/GaAs quantum dots | |
| 000D63 (2003) | Generation of non-classical light by single quantum dots | |
| 000D70 (2003) | Far-infrared probe of size dispersion and population fluctuations in doped self-assembled quantum dots | |
| 000E29 (2002-10-15) | Quantum wires in multidimensional microcavities: Effects of photon dimensionality on emission properties | |
| 000E78 (2002-02-15) | Far-infrared magnetospectroscopy of polaron states in self-assembled InAs/GaAs quantum dots | |
| 000F23 (2002) | Spin dynamics of neutral and charged excitons in InAs/GaAs quantum dots: towards Q-bit implementation? | |
| 000F75 (2002) | Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm | |
| 000F95 (2002) | Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots | |
| 001019 (2002) | Exciton spin dynamics in self-organized InAs/GaAs quantum dots | |
| 001040 (2002) | Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions | |
| 001066 (2001-10-29) | Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities | |
| 001068 (2001-10-29) | Quantum Cascade of Photons in Semiconductor Quantum Dots | |
| 001073 (2001-10-01) | Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots | |
| 001094 (2001-06-15) | Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots | |
| 001116 (2001-02-19) | Spin Relaxation Quenching in Semiconductor Quantum Dots | |
| 001221 (2001) | Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots | |
| 001492 (2000) | 1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response | |
| 001515 (1999-11-15) | Strong Electron-Phonon Coupling Regime in Quantum Dots: Evidence for Everlasting Resonant Polarons | |
| 001532 (1999-09-27) | High-Q wet-etched GaAs microdisks containing InAs quantum boxes | |
| 001575 (1999-05-03) | Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy | |
| 001690 (1999) | Novel prospects for self-assembled InAs/GaAs quantum boxes | |
| 001818 (1998-10-15) | Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect | |
| 001845 (1998-07-06) | Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots | |
| 001996 (1998) | High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy | |
| 001C75 (1997) | Exciton dynamics in quantum-well microcavities | |
| 001E00 (1996-05-27) | InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si | |
| 001E24 (1996-03-01) | Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells | |
| 002142 (1995) | Optical investigation of the self-organized grown of InAs/GaAs quantum boxes | |
| 002178 (1995) | Fast photorefractive materials using quantum wells | |
| 002261 (1994-08-15) | Resonant second-harmonic generation in type-II heterostructures of InP/Al0.48In0.52As | |
| 002440 (1994) | Analysis of MBE growth and atomic exchange in thin highly strained InAs layers | |
| 002999 (1991) | New dry etching method for the fabrication of InP/inGaAs quantum wires | |
| 002A35 (1991) | Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires | |
| 002B25 (1990) | Optical properties of As-etched and regrown InP/InGaAs quantum wires and dots | |
| 002B32 (1990) | Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires | |
| 002B66 (1990) | Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots | |
| 002D62 (1988) | Optical studies of misfit strain effects in GaxIn1-x P epitaxial layers on (001) GaAs substrates | |
| 002D95 (1988) | Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy | |
| 002D96 (1988) | Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy | |
| 003010 (1986) | Luminescence investigations of highly strained-layer InAs-GaAs superlattices | |
| 003022 (1986) | Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate | |
| 003072 (1985) | Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1-xInxAs/GaAs on GaAs quantum wells |
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