| 002A06 (1991) |
| MOMBE growth of high quality GaAs/GaInP heterostructures |
| 002B01 (1990) |
| The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD |
| 002973 (1991) |
| Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source |
| 002A04 (1991) |
| Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures |
| 002A10 (1991) |
| Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1-xP |
| 002A65 (1991) |
| Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties |
| 002B35 (1990) |
| MOMBE growth of high-quality InP and GalnAs bulk, heterojunction and quantum well layers |
| 002B55 (1990) |
| High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure meta========???010???.horbar;organic chemical vapour deposition |
| 002C11 (1989) |
| Première observation d'une résistance différentielle négative dans un système à double barrière InP/Ga0,47In0,53As |
| 002C19 (1989) |
| Croissance et caractérisation d'hétérostructures GaAs/Ga0,49In0,51P élaborées par LP-MOCVD |
| 002C20 (1989) |
| Croissance et caractérisation d'alliages GaInAsP de gaps égaux à 1,3 et 1,15 μm élaborés par LP-MOCVD |
| 002C21 (1989) |
| Couches d'InP de très haute pureté obtenues par croissance en phase vapeur par la méthode des organométalliques |
| 002D90 (1988) |
| High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates |
| 002D91 (1988) |
| High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition |
| 002E00 (1988) |
| First room-temperature cw operation of a GalnAsP/InP light-emitting diode on a silicon substrate |
| 002E01 (1988) |
| First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate |
| 002E02 (1988) |
| First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate |
| 002F21 (1987) |
| First observation of quantum Hall effect in a GaInAsP-InP heterostructure grown by metalorganic chemical vapor deposition |
| 003056 (1985) |
| Etude des matériaux spécifiques, l'épitaxie de semi-conducteurs composés et l'adaptation du masquage électronique à la WSI. Thème 2: épitaxie d'arséniure de gallium sur silicium |
| 002567 (1993) |
| Room temperature 600mW CW output power per facet from single GaInAs/GaAs/GaInP large area laser diode grown by CBE |
| 002659 (1993) |
| High quality 0.98 μm GaInAs/GaAs/GaInP lasers growth by CBE using tertiarybutylarsine and tertiarybutylphosphine |
| 002911 (1992) |
| Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy |
| 002952 (1991) |
| Etude du dopage de type n et p des matériaux GaAs et GaInP |
| 002A03 (1991) |
| Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P |
| 002A29 (1991) |
| Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors |
| 002B48 (1990) |
| In situ investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measuremets |
| 002B49 (1990) |
| In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy |
| 002C76 (1989) |
| Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition |
| 002C79 (1989) |
| Electron spin resonance in the two-dimensional electron gas of a GaAs-GaxIn1-xP heterostructure |
| 002D26 (1988) |
| Very high purity InP epilayer grown by metalorganic chemical vapor deposition |
| 002F05 (1987) |
| Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition |
| 002F84 (1986) |
| The effect of hydrostatic pressure on a Ga0.47In0.53As/InP heterojunction with three electric sub-bands |
| 002F95 (1986) |
| Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition |
| 002642 (1993) |
| Influence of rapid thermal annealing on the properties of strained GaInAs quantum well lasers |
| 002725 (1993) |
| Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine |
| 002993 (1991) |
| Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition |
| 002A28 (1991) |
| GaAs-GaInP multilayers for high performance electronic devices |
| 002A56 (1991) |
| Defects in organometallic vapor-phase epitaxy-grown GaInP layers |
| 002A72 (1991) |
| A review of the band offsets measurements in the GaAs/Ga0.49In0.51P system |
| 002B34 (1990) |
| Magnetotransport measurements in GaInP/GaAs heterostructures |
| 002B42 (1990) |
| Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation |
| 002F45 (1987) |
| Cyclotron resonance investigations in GaInAs(P)/InP heterojunctions grown by low-pressure metal-organic chemical vapour deposition |
| 002F50 (1987) |
| CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition |
| 002F99 (1986) |
| Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands |
| 003024 (1986) |
| First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition |
| 003025 (1986) |
| First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands |
| 003064 (1985) |
| Two-dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition |
| 003092 (1984) |
| cw operation of 1.57-μm GaxIn1-xAsyP1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition |
| 003122 (1984) |
| CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD |
| 000390 (2009) |
| Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy |
| 000481 (2008) |
| n-type phosphorus-doped polycrystalline diamond on silicon substrates |
| 000D59 (2003) |
| High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects |
| 001176 (2001) |
| Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers |
| 001236 (2001) |
| Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability |
| 001522 (1999-10-25) |
| Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN |
| 001737 (1999) |
| Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction |
| 001A01 (1998) |
| Growth characteristics of hydride-free chemical beam epitaxy and application to GaLnP/GaAs heterojunction bipolar transistors |
| 002638 (1993) |
| Intermixing of GaInP/GaAs multiple quantum wells |
| 002669 (1993) |
| Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature |
| 002691 (1993) |
| Electrical properties of P-rich InP grown by gas source MBE |
| 002693 (1993) |
| Electrical conduction in low temperature grown InP |
| 002694 (1993) |
| Electrical conduction in low temperature grown InP |
| 002736 (1993) |
| Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions |
| 002886 (1992) |
| High power, 0.98 μm, Ga0.8As/GaAs/Ga0.51In0.49P multiple quantum well laser |
| 002B14 (1990) |
| Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction |
| 002C40 (1989) |
| Recent advances in III-V compounds on silicon |
| 002C46 (1989) |
| Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions |
| 002C93 (1989) |
| 1.3-1.55 μm wavelength integrated photoreceiver using GaInAS/GaAs heteroepitaxy |
| 002D69 (1988) |
| Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate |
| 002D70 (1988) |
| Monolithic integrated photoreceiver for 1.3-1.55-μm wavelengths: association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy |
| 002E09 (1988) |
| Electro-optical modulators using novel buried waveguides in GaInAsP/InP material |
| 002E47 (1987) |
| Observation d'états excitoniques à température ambiante dans les semiconducteurs à puits quantiques de type InGaAs/InP (applications) |
| 002E51 (1987) |
| Modulateurs à faibles pertes dans InGaAsP/InP |
| 002E62 (1987) |
| Very low-loss GalnAs/InP optical waveguides for the 10•6μm wavelength |
| 002F03 (1987) |
| Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures |
| 002F40 (1987) |
| Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion |
| 003003 (1986) |
| Planar monolithic integrated photoreceiver for 1.3-1.55 um wavelength applications using GaInAs-GaAs heteroepitaxies |
| 003036 (1986) |
| Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel |
| 003048 (1986) |
| A study of n-type GaxInl-xAsyPl-y-InP quantum wells |
| 003065 (1985) |
| Shallow p+ layers in In0.53Ga0.47As by Hg implantation |
| 003073 (1985) |
| InGaAs photodiodes prepared by low-pressure MOCVD |
| 003074 (1985) |
| Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition |
| 003115 (1984) |
| High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz |
