Le cluster L. Bechiri - N. Benslim
| 000832 (2006) | Fabrication and characterisation of CuInSe2/Si(1 0 0) thin films by the stacked elemental layer (SEL) technique | |
| 000622 (2007) | Synthesis and material properties of Cu-III-VI2 chalcopyrite thin films | |
| 000703 (2007) | DC and high-frequency conductivity of CuInSe2 bulk crystals | |
| 000822 (2006) | Growth and characterization of CuInxGa1-xTe2 used for photovoltaic conversion | |
| 000992 (2005) | Diffusion of Zn in CuInSe2 bulk crystals | |
| 000276 (2010) | Preparation and characterization of flash-evaporated CuLnSe2/CuGaSe2 thin films | |
| 000F19 (2002) | Structural and optical properties of CuInxGa1-xSe2 thin films prepared by flash evaporation | |
| 000169 (2011) | Study of polycrystalline bulk CuIn1-xGaxTe2 | |
| 000799 (2006) | Meta-GGA calculation of the electronic structure of group III-V nitrides | |
| 000D79 (2003) | Electrical and photoluminescence properties of evaporated CuIn1-xGaxTe2 thin films | |
| 001246 (2001) | First-principles calculations of optical properties of AlN, GaN, and InN compounds under hydrostatic pressure | |
| 000110 (2012) | Nanostructured thermally evaporated CuInSe2 thin films synthesized from mechanically alloyed powders and self-combustion ingot | |
| 000824 (2006) | Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN | |
| 000825 (2006) | Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk | |
| 000909 (2005) | Ordering effects on the electronic structures of A1N/GaN, InN/GaN and InN/AlN superlattices | |
| 000964 (2005) | First-principles study of cubic AlxGa1-xN alloys | |
| 000D67 (2003) | First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN alloys | |
| 001559 (1999-06-15) | Formation mechanism and relative stability of the {1120} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides | |
| 001872 (1998-04-06) | Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy | |
| 000157 (2011) | The high sensitivity of InN under rare earth ion implantation at medium range energy | |
| 000205 (2011) | Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds | |
| 000260 (2010) | The structure of InAlN/GaN heterostructures for high electron mobility transistors | |
| 000289 (2010) | Optical properties of InN grown on Si(111) substrate | |
| 000296 (2010) | Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer | |
| 000302 (2010) | Investigation of InN layers grown by molecular beam epitaxy on GaN templates | |
| 000694 (2007) | Effect of annealing on In2S3 thin films prepared by flash evaporation | |
| 000766 (2006) | Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE | |
| 000807 (2006) | Investigation of InN layers grown by MOCVD using analytical and high resolution TEM : The structure, band gap, role of the buffer layers | |
| 000866 (2005) | V-defects and dislocations in InGaN/GaN heterostructures | |
| 000943 (2005) | Interfacial structure of MBE grown InN on GaN | |
| 000985 (2005) | Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE | |
| 000A91 (2004) | Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures | |
| 000B10 (2004) | Nanoscale EELS analysis of InGaN/GaN heterostructures | |
| 000C78 (2003) | Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy In1-xGaxAsySb1-y epilayer on GaSb and InAs | |
| 000E60 (2002-06-01) | Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers | |
| 000F37 (2002) | Quantitative measurement of In fluctuation inside MOCVD InGaN QWs | |
| 001689 (1999) | Observation of ordering and phase separation in InxGa1-xN layers | |
| 001A60 (1997-11-15) | Theoretical analysis of disorder effects on electronic and optical properties in InGaAsP quaternary alloy | |
| 002F64 (1986) | Etude fondamentale in-situ (ultra-vide, plasma, photoémission X) des interfaces isolant GaAs et GaInAs élaborés en plasma multipolaire et de leur évolution (température, irradiation UV) |
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