Documents par ordre de pertinence

000657 (2007)		Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000A31 (2004-05-03)		Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A96 (2004)		Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000C25 (2003-08-15)		Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
000241 (2011)		Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 μm emission
000412 (2009)		Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission
000658 (2007)		Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000B31 (2004)		Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000B53 (2004)		Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers
000C19 (2003-08-18)		Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN

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