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Racine
Analysis
France
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Racine
Racine

Serveur d'exploration sur l'Indium

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Le cluster A. Tabata - A. Georgakilas

Terms

14A. Tabata
13A. Georgakilas
11K. Zekentes
8G. Halkias
6S. Moneger

Associations

Freq.WeightAssociation
88A. Tabata - K. Zekentes
99A. Georgakilas - K. Zekentes
88G. Halkias - K. Zekentes
88A. Tabata - G. Halkias
88A. Georgakilas - G. Halkias
88A. Georgakilas - A. Tabata
66A. Tabata - S. Moneger
Documents par ordre de pertinence
002536 (1993) Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
002565 (1993) Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates
002566 (1993) Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
002581 (1993) Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells
002586 (1993) Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002747 (1993) A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology
002265 (1994-08-01) Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
000766 (2006) Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000932 (2005) Micro-raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures
000943 (2005) Interfacial structure of MBE grown InN on GaN
000D12 (2003) Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
001E28 (1996-02-15) Weak antilocalization and spin precession in quantum wells
002272 (1994-07) Optical properties of InAs/InP surface layers formed during the arsenic stabilization process
002351 (1994) Strain relaxation studied by photoluminescence by double crystal X-ray diffraction measurements in strained InGaAs
002422 (1994) Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations
002582 (1993) Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures
002994 (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy
Wicri

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