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Serveur d'exploration sur l'Indium

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Le cluster T. Amand - X. Marie

Terms

32T. Amand
37X. Marie
22J. Barrau
12M. Brousseau
8B. Urbaszek
18O. Krebs
49P. Voisin
52J. C. Harmand

Associations

Freq.WeightAssociation
2929T. Amand - X. Marie
1212J. Barrau - T. Amand
1111J. Barrau - X. Marie
1111J. Barrau - M. Brousseau
1010M. Brousseau - T. Amand
88M. Brousseau - X. Marie
88B. Urbaszek - T. Amand
1818O. Krebs - P. Voisin
1111J. C. Harmand - P. Voisin
77P. Voisin - X. Marie
77P. Voisin - T. Amand
77O. Krebs - X. Marie
77O. Krebs - T. Amand
77B. Urbaszek - X. Marie
Documents par ordre de pertinence
000633 (2007) Role of hyperfine interaction on electron spin optical orientation in charge-controlled InAs-GaAs single quantum dots
000774 (2006) Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots
000983 (2005) Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots
000991 (2005) Direct observation of the electron spin relaxation induced by nuclei in quantum dots
000C97 (2003) Spin polarization dynamics in n-doped InAs/GaAs quantum dots
000E24 (2002-11-11) Optically Driven Spin Memory in n-Doped InAs-GaAs Quantum Dots
000F23 (2002) Spin dynamics of neutral and charged excitons in InAs/GaAs quantum dots: towards Q-bit implementation?
001E75 (1996) Spin repolarization in bidimensional gas of interacting excitons
002169 (1995) Hole spin relaxation in intrinsic quantum wells
002243 (1994-10-15) Exciton formation and hole-spin relaxation in intrinsic quantum wells
002415 (1994) Enhanced exciton blue shift in spin polarized dense exciton system in quantum wells
002551 (1993) Spin relaxation of excitons in strained InGaAs/GaAs quantum wells
002789 (1992) Well-width dependence of the excitonic lifetime in strained III-V quantum wells
002977 (1991) Stark effect in GaInAs/GaInAsP quantum-wells
002A12 (1991) Interfacial-band discontinuities for strained layers on InxGa1-x as grown on (100) GaAs
000394 (2009) Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000974 (2005) Exciton spin manipulation in inAs/GaAs quantum dots : Exchange interaction and magnetic field effects
000A77 (2004) Spin dynamics in undoped and n-doped InAs/GaAs quantum dots
000B79 (2004) Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
001640 (1999) The quantum confined Pockels effect in InGaAs-based multi-quantum wells
001B51 (1997-01-15) Band discontinuities in InxGa1-xAs-InP and InP-AlyIn1-yAs heterostructures: Evidence of noncommutativity
001C21 (1997) Potential-inserted InGaAs-AlGaInAs shallow quantum wells for electro-optical modulation at 1.55 μm
001C66 (1997) High power saturation, polarization insensitive electroabsorption modulator with spiked shallow wells
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002867 (1992) Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000A47 (2004-01-15) Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
001019 (2002) Exciton spin dynamics in self-organized InAs/GaAs quantum dots
001024 (2002) Electron spin redistribution due to Pauli blocking in quantum dots and quantum wells
001094 (2001-06-15) Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots
001099 (2001-05-14) Wetting layer carrier dynamics in InAs/InP quantum dots
001116 (2001-02-19) Spin Relaxation Quenching in Semiconductor Quantum Dots
001122 (2001-01-15) Excitonic contributions to the quantum-confined Pockels effect
001264 (2001) Dynamical redistribution of mean electron spin over the energy spectrum of quantum dots
001341 (2000-03-15) Light-heavy hole mixing and in-plane optical anisotropy of InP-AlxIn1-xAs type-II multiquantum wells
001354 (2000-01-03) Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation
001513 (1999-11-29) Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates
001533 (1999-09-27) Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells
001579 (1999-05) Electron spin beats in InGaAs/GaAs quantum dots
001818 (1998-10-15) Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect
001858 (1998-06-29) Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects
001B93 (1997) Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates
001C47 (1997) Investigations of giant 'forbidden' optical anisotropy in GaInAs-InP quantum well structures
001D65 (1996-08-26) Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect
001F16 (1996) Investigation of low power all-optical bistability in an InGaAs-InAlAs superlattice
002037 (1995-07-10) High performance polarization insensitive electroabsorption modulator based on strained GaInAs-AlInAs multiple quantum wells
002078 (1995-01-15) Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques
002163 (1995) Investigation of low-power all-optical bistability in an InGaAs-InAlAs superlattice
002312 (1994-02-07) Low power all-optical bistability in InGaAs-AlInAs superlattices: Demonstration of a wireless self-electro-optical effect device operating at 1.5 μm
002630 (1993) Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device
002884 (1992) High-frequency operation of very low voltage, 1.55μm single-mode optical waveguide modulator based on wannier-stark localization
000212 (2011) Hot carrier relaxation process in InGaN epilayers : Novel Gain Materials Based on III-V-N Compounds
000431 (2009) Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy
000501 (2008) Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
000523 (2008) Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≃ 10%) saturable absorber quantum wells
000630 (2007) Spin lifetime from the Hanle effect and fine structure of excitonic levels in InAlAs/AlGaAs quantum dots
000636 (2007) Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice
000855 (2006) Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000914 (2005) Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000975 (2005) Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
000A05 (2005) Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000A31 (2004-05-03) Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells
000A96 (2004) Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
000B31 (2004) Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000B53 (2004) Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000B95 (2004) 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000C19 (2003-08-18) Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000C54 (2003-03-01) In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
000E59 (2002-06-01) Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
000F50 (2002) Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001006 (2002) High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001070 (2001-10-22) Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
001218 (2001) Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001342 (2000-03-13) Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity
001460 (2000) Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInas-distributed Bragg mirrors on InP
001504 (1999-12-01) Strain optimization for high differential gain and low current operation in 1.55 μm InGaAs/InGaAsP quantum well lasers
001582 (1999-04-15) Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
001659 (1999) Spin-splitting of the subbands of InGaAs-InP and other 'no common atom' quantum wells
001671 (1999) Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001816 (1998-11) Quasi-CW room temperature operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
001913 (1998) Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices
001940 (1998) Room-temperature continuous-wave operation VCSEL at 1.48 μm with Sb-based Bragg reflector
001971 (1998) Millimetre-wave negative differential conductance in GaInAs/AlInAs semiconductor superlattices
001B67 (1997) HEMT à canal composite GaInAs/InP pour circuits de modulation optique
001C62 (1997) Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux
001D13 (1997) AlGaAsSb/AlAsSb microcavity designed for 1.55 μm and grown by molecular beam epitaxy
001D84 (1996-07) Characterization of electrical damage induced by CH4/H2 reactive ion etching of molecular beam epitaxial InAlAs
001E78 (1996) Short period superlattices under hydrostatic pressure
001E98 (1996) Observation of giant birefringence and dichroism in InP-AlInAs type II superlattices
002019 (1995-09-15) Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers
002068 (1995-03) Etude de faisabilité de modulateurs électroabsorbants en onde guidée insensibles à la polarisation
002130 (1995) Proposal and demonstration of a symmetrical npipn electroabsorption modulator
002186 (1995) Electroabsorption modulators for high-bit-rate optical communications : a comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP
002192 (1995) Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy
Wicri

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