Le cluster C. Brylinski - M. A. Di Forte-Poisson
| 002391 (1994) | LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs | |
| 002405 (1994) | GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits | |
| 002335 (1994) | Le transistor bipolaire à hétérojonction GaInP/GaAs. Technologie et performances hyperfréquences | |
| 002851 (1992) | Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor | |
| 002A30 (1991) | First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT | |
| 001236 (2001) | Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability | |
| 001727 (1999) | High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact | |
| 000E86 (2002) | Transistors Bipolaires à hétérojonction sur substrat GaAs : Résultats de fiabilité et circuits intégrés monolithiques : Croissance épitaxiale en phase vapeur aux organométalliques | |
| 001C97 (1997) | Collector-up InGaP/GaAs-double heterojunction bipolar transistors with high fmax | |
| 001D02 (1997) | Boron implantation into GaAs/Ga0.5In0.5P heterostructures | |
| 002709 (1993) | Defects in epitaxial Si-doped GaInP | |
| 002B95 (1990) | A new realisation of Schottky diodes on n-type Inp | |
| 000272 (2010) | Reliability of high voltage/high power L/S-band Hbt technology | |
| 000E36 (2002-09-01) | Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer | |
| 001424 (2000) | Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer | |
| 001B74 (1997) | Conception d'un oscillateur H.B.T. GaInP/GaAs très faible bruit de phase : -124 dBc/Hz à 10 KHz en bande C | |
| 002121 (1995) | Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies | |
| 002337 (1994) | Croissance LP-MOCVD de structures transistor bipolaire à hétérojonction GaInP/GaAs | |
| 002605 (1993) | Observation of a two dimensional hole gas in a GaInP/GaAs heterojunction | |
| 002725 (1993) | Chemical beam epitaxy of Ga0.5In0.5P using tertiarybutylphosphine | |
| 002737 (1993) | Band offset of GaAs-GaInP heterojunctions | |
| 002895 (1992) | Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD | |
| 002C58 (1989) | Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP | |
| 003074 (1985) | Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition | |
| 003115 (1984) | High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz | |
| 001007 (2002) | Growth optimisation of GaInN/GaN multiple quantum well structures: Application to RCLED devices | |
| 001B60 (1997) | Propriétés en bruit basse fréquence des DHBT's GaInP/GaAs/GaInP | |
| 001D73 (1996-07-15) | Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes | |
| 002378 (1994) | Microwave components and subassemblies for millimeter wave applications | |
| 002814 (1992) | Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures | |
| 002A48 (1991) | Electrical properties of distributed electron cyclotron resonance plasma-deposited SiO2-InP diodes | |
| 002E62 (1987) | Very low-loss GalnAs/InP optical waveguides for the 10•6μm wavelength |
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