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Serveur d'exploration sur l'Indium

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Le cluster F. Hassen - H. Maaref

Terms

20F. Hassen
29H. Maaref
14G. Bacquet
13B. Salem
6L. Sfaxi
7N. Lauret

Associations

Freq.WeightAssociation
1212F. Hassen - H. Maaref
88F. Hassen - G. Bacquet
88B. Salem - H. Maaref
66H. Maaref - L. Sfaxi
55G. Bacquet - N. Lauret
55F. Hassen - N. Lauret
Documents par ordre de pertinence
000914 (2005) Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000D00 (2003) Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
000A59 (2004) Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
002552 (1993) Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates
002553 (1993) Spin orientation by optical pumping in strained InxGa1-xAs/GaAs quantum wells
002593 (1993) Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002810 (1992) Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells
000221 (2011) Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates
000238 (2011) Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000330 (2010) Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000450 (2009) Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000702 (2007) Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000819 (2006) Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000975 (2005) Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
000B89 (2004) Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
000D07 (2003) Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
000F55 (2002) Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001285 (2001) A novel selectively 6-doped AlGaAs/(In, Ga, As)/GaAs pseudomorphic heterostructure
001414 (2000) Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001546 (1999-08-01) Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001667 (1999) Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
001714 (1999) Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001C30 (1997) Optical characterization of highly mismatched InP/GaAs(111)B epitaxial heterostructures
002141 (1995) Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C
002155 (1995) Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP
002352 (1994) Spin orientation by optical pumping in InxGa1-xAs/AlAs multiple quantum wells
000060 (2013) Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000268 (2010) Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000C38 (2003-05-15) Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000E22 (2002-11-15) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
001383 (2000) Structural and electronic properties of poly(meta/para phenylene)
001686 (1999) Optical characterization of bulk CuIn3Se5
001848 (1998-07-01) A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
001957 (1998) Photoluminescence in p-type CuInSe2 single crystals
001A07 (1998) Excitation intensity dependence of the near band-edge photoluminescence spectra of CuInTe2 at 4.2 K
001A65 (1997-11-01) Temperature dependence of the photoluminescence spectra of single crystals of CuInTe2
001C26 (1997) Optical properties of InP epilayers grown on (111)B GaP substrates by metalorganic chemical vapor deposition
002282 (1994-06) Etude par pompage optique de puits quantiques contraints Ga1-xInxAs/GaAs
002693 (1993) Electrical conduction in low temperature grown InP
002694 (1993) Electrical conduction in low temperature grown InP
002953 (1991) Etude de contacts métal-InP(n) clivé : barrière de Schottky et états d'interface
002977 (1991) Stark effect in GaInAs/GaInAsP quantum-wells
002C23 (1989) Caractérisation électronique d'interfaces profondes AI-InP
003009 (1986) Luminescence of heavily electron irradiated InP
003045 (1986) An experimental evidence of the destruction of complex defects by the introduction of dislocations in InP
Wicri

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