Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster A. Chevy - A. Segura

Terms

29A. Chevy
16A. Segura
7D. Errandonea
6J. Pellicer-Porres

Associations

Freq.WeightAssociation
1313A. Chevy - A. Segura
77A. Segura - D. Errandonea
66A. Segura - J. Pellicer-Porres
66A. Chevy - D. Errandonea
Documents par ordre de pertinence
000614 (2007) Transport measurements under pressure in III-IV layered semiconductors
000681 (2007) GaS and InSe equations of state from single crystal diffraction
000718 (2007) Buildup of the InSe/M interface (M = Pd, Au) studied by X-ray photoemission and X-ray absorption spectroscopy
000811 (2006) Interdiffusion process in the InSe/Pt interface studied by angle- resolved photoemission
000A02 (2005) Crystal symmetry and pressure effects on the valence band structure of γ-InSe and ε-GaSe : Transport measurements and electronic structure calculations
000C74 (2003) Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
000C98 (2003) Specific features of the electronic structure of III-VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations
000F93 (2002) Investigation of the local structure of as-related acceptor centres in InSe by means of fluorescence-detected XAS
001498 (1999-12-15) Effects of pressure and temperature on the dielectric constant of GaS, GaSe, and InSe: Role of the electronic contribution
001865 (1998-05-01) Tin-related double acceptors in gallium selenide single crystals
001B16 (1997-06-15) Investigation of conduction-band structure, electron-scattering mechanisms, and phase transitions in indium selenide by means of transport measurements under pressure
000445 (2009) High pressure and high magnetic field behaviour of free and donor-bound-exciton photoluminescence in InSe
000627 (2007) Structural and optical high-pressure study of spinel-type MnIn2S4
001C23 (1997) Photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy
002529 (1993) Time resolved photoluminescence of Cd-doped InSe
001461 (2000) Effect of pressure on direct optical transitions of γ-InSe
001547 (1999-08-01) High-pressure x-ray absorption study of InSe
001B47 (1997-02-15) Femtosecond coherent polariton dynamics in the layered III-VI semiconductor InSe
001D46 (1996-10-01) Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles
001E86 (1996) Raman investigation of InSe doped with GaS
002168 (1995) InSe/GaSe hterointerfaces prepared by Van der Waals epitaxy
002276 (1994-06-15) Optical second-harmonic generation in lossy media: Application to GaSe and InSe
002297 (1994-04-15) Inverse-photoemission spectroscopy of GaSe and InSe
002800 (1992) Temperature dependent far-infrared reflectance of layer structured III-VI compounds
002815 (1992) Reflection high-energy electron diffraction studies of InSe and GaSe layered compounds grown by molecular beam epitaxy
002897 (1992) Far-infared spectra of indium selenide single crystals
002B23 (1990) Optical properties of In2Se3 phases
002E64 (1987) Two-dimensional defects in InSe
002F17 (1987) Growth conditions and optical properties of InxSe1-x thin films
003004 (1986) Photoluminescence studies on the layer semiconductor In2Se3
003098 (1984) Segregation of dopants in melt-grown indium selenide crystals
003114 (1984) Improvement of growth parameters for Brigman-grown InSe crystals
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024