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Serveur d'exploration sur l'Indium

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Le cluster D. Rondi - R. Blondeau

Terms

23D. Rondi
21R. Blondeau
17B. De Cremoux
7A. Enard
8G. Glastre

Associations

Freq.WeightAssociation
1313D. Rondi - R. Blondeau
99B. De Cremoux - R. Blondeau
88B. De Cremoux - D. Rondi
66A. Enard - R. Blondeau
66A. Enard - D. Rondi
55G. Glastre - R. Blondeau
Documents par ordre de pertinence
002A83 (1990) Modulateurs électrooptiques à faible perte dans InGaAsP/InP
002212 (1995) Active lossless monolithic one-by-four splitters/combiners using optical gates on InP
002616 (1993) Monolithic integration of 2×2 switch and optical amplifier with 0dB fibre to fibre insertion loss grown by LP-MOCVD
002987 (1991) Polarisation insensitive 1.55μm semiconductor integrated optical amplifier with access waveguides grown by LP-MOCVD
002E09 (1988) Electro-optical modulators using novel buried waveguides in GaInAsP/InP material
002E51 (1987) Modulateurs à faibles pertes dans InGaAsP/InP
002842 (1992) Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications
002942 (1991) Etude et réalisation de circuits intégrés optoélectroniques microondes
001669 (1999) Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes
001994 (1998) Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001995 (1998) Highly selective 1.55 μm InP/air gap micromachined Fabry-Perot filter for optical communications
001C31 (1997) Optical characterization methods of InP based micro-opto-electro-mechanical systems
001C57 (1997) InP-based micro-mechanical tunable and selective photodetector for WDM systems
001F07 (1996) Low temperature behaviour of laser diodes
002A25 (1991) Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells
002B26 (1990) Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure
002B27 (1990) Optical investigation of the band offsets in an InGaAs-InGaAsP-InP double-step quantum well
002D25 (1988) Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD
002F50 (1987) CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition
003092 (1984) cw operation of 1.57-μm GaxIn1-xAsyP1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition
003122 (1984) CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD
001208 (2001) MBE growth of room-temperature InAsSb mid-infrared detectors
001327 (2000-07-17) Room temperature InAsSb photovoltaic midinfrared detector
001442 (2000) High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers
001466 (2000) Design and fabrication of optical microcavities using III-V semiconductor-based MOEMS
001533 (1999-09-27) Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells
001640 (1999) The quantum confined Pockels effect in InGaAs-based multi-quantum wells
001724 (1999) Highly tunable and selective fabry Perot filter based on InP-air Bragg mirrors for W.D.M. applications
001818 (1998-10-15) Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect
001858 (1998-06-29) Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects
001F76 (1996) All-optical wavelength converters for optical switching applications
002665 (1993) Giant photovoltage of semiconductor heterostructures
002B28 (1990) Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination
002E00 (1988) First room-temperature cw operation of a GalnAsP/InP light-emitting diode on a silicon substrate
002E01 (1988) First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate
002F51 (1987) C-V measurement and modelization of GalnAs/InP heterointerface with traps
003034 (1986) Dark-current and capacitance analysis of InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition
003051 (1986) A simple model and calculation of the influence of doping and intrinsic concentrations on the interstitial-substitutional diffusion mechanism: application to Zn and Cd in InP
003073 (1985) InGaAs photodiodes prepared by low-pressure MOCVD
003094 (1984) The temperature-dependent diffusion mechanism of Zn in InP using the semiclosed diffusion method
Wicri

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