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Serveur d'exploration sur l'Indium

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Le cluster F. Alexandre - J. L. Benchimol

Terms

30F. Alexandre
31J. L. Benchimol
14P. Launay
22G. Le Roux
24M. Quillec
23C. Kazmierski
15D. Robein
13B. Rose

Associations

Freq.WeightAssociation
1313F. Alexandre - J. L. Benchimol
77J. L. Benchimol - P. Launay
88G. Le Roux - M. Quillec
77G. Le Roux - J. L. Benchimol
77C. Kazmierski - M. Quillec
77C. Kazmierski - D. Robein
77B. Rose - D. Robein
55F. Alexandre - P. Launay
55F. Alexandre - G. Le Roux
Documents par ordre de pertinence
001704 (1999) MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001789 (1999) +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001F28 (1996) Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
002148 (1995) Modern epitaxial techniques for HBT structures
002753 (1993) 'High frequency' quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth
002855 (1992) Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure
002A16 (1991) Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
002A32 (1991) First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers
002B85 (1990) Chemical beam epitaxy of indium phosphide
002C39 (1989) Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure
003022 (1986) Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate
001291 (2001) (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001590 (1999-02-15) Oxide confining layer on an InP substrate
001A26 (1998) CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
001A30 (1998) Beam geometrical modelling of CBE on nonplanar substrate
001B13 (1997-07) Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents
001B30 (1997-05-26) Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength
001C22 (1997) Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
001C35 (1997) Monolithic vertical cavity device lasing at 1.55μm in InGaAlAs system
001C93 (1997) Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
001D07 (1997) Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors
001D40 (1996-11) High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy
001D73 (1996-07-15) Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes
001D85 (1996-06-24) p- and n-type carbon doping of InxGa1-xAsyP1-y alloys lattice matched to InP
001E24 (1996-03-01) Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells
001F69 (1996) CBE growth of InGaAs(P) alloys using TDMAAs and TBP
001F71 (1996) Benefits of chemical beam epitaxy for micro and optoelectronic applications
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing
002102 (1995) Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
002192 (1995) Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy
002218 (1995) 8 Gbit/s GaAs-on-InP 1.3 μm wavelength OEIC transmitter
002370 (1994) Optical characterization of chemical beam epitaxy grown Ga0.52In0.48P layers and related microstructures
002409 (1994) First hydride free GaInP/GaAs carbon doped HBT grown by CBE using DMAAs and TBP
002524 (1993) Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation
002549 (1993) Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy
002675 (1993) Experimental study of the hydrogen complexes in indium phosphide
002791 (1992) Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP
002837 (1992) New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product
002862 (1992) Innovative passivated heterojunction bipolar transistor grown by CBE
002885 (1992) High speed ultralow chirp 1.55μm MBE grown GaInAs/AlGaInAs MQW DFB lasers
002925 (1992) Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation
002A07 (1991) MBE growth of graded index AlGaInAs MQW lasers on InP
002A21 (1991) High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers
002A35 (1991) Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002A67 (1991) Buried ridge stripe 1.5 μm GaInAsP/InP laser-waveguide integration by a simplified process
002A69 (1991) Application of AP MOVPE to a new butt-coupling scheme
002B36 (1990) Low-threshold GRIN-SCH AlGaInAs 1•55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy
002B58 (1990) Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
002E75 (1987) Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium
003018 (1986) InGaAsP superlattices grown by liquid-phase epitaxy
000589 (2008) Demonstration of planar thick InP layers by selective MOVPE
000659 (2007) Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000B96 (2004) 42 GHz bandwidth InGaAlAs/InP electro absorption modulator with a sub-volt modulation drive capability in a 50 nm spectral range
000C91 (2003) Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 μm laser emission
000D36 (2003) Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000E87 (2002) Nitrures de faible gap épitaxiés sur substrat GaAs pour application optoélectronique : Croissance épitaxiale en phase vapeur aux organométalliques
000F61 (2002) Nitride-based long-wavelength lasers on GaAs substrates
000F98 (2002) InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits
001207 (2001) MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001232 (2001) InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001363 (2000) Diodes électroluminescentes à microcavité pour le contrôle de l'émission spontanée
001410 (2000) Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001428 (2000) Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
001671 (1999) Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001864 (1998-05-18) Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001956 (1998) Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
001996 (1998) High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
001A84 (1997-09-29) Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
001B62 (1997) Phototransistor TBH InGaAs/InP pour conversion optique/microondes
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001C55 (1997) InP/InGaAs double-HBT technology for high bit-rate communication circuits
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
001D68 (1996-08-15) Transport properties of hydrogenated p-GaInAs doped with carbon
001F45 (1996) Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber
002000 (1995-11-01) Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration
002019 (1995-09-15) Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers
002045 (1995-06-15) Acoustical and optical properties of Ga0.52In0.48P: A Brillouin scattering study
002103 (1995) Ultra-fast optical switching operation of DBR lasers using an electro-optical tuning section
002144 (1995) Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser
002146 (1995) Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
002171 (1995) High temperature characteristics T0 and low threshold current density of 1.3μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
002202 (1995) Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates
002207 (1995) Butt-jointed DBR laser with 15 nm tunability grown in three MOVPE steps
002662 (1993) Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy
002714 (1993) Cryogenic investigation of gate leakage and RF performance down to 50K of 0.2μm AlInAs/GaInAs/InP HEMT's
002821 (1992) Phase-amplitude coupling factor of single-mode gain-switched InGaAsP laser diodes
002860 (1992) Interest in AlGalnAs on InP for optoelectronic applications
002882 (1992) Highly thermally stable, high-performance InGaAsP : InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
002991 (1991) Over 245 mW 1.3 μm buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching technique
002A12 (1991) Interfacial-band discontinuities for strained layers on InxGa1-x as grown on (100) GaAs
002A57 (1991) Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP : an explanation of low Be acceptor activity
002B59 (1990) GaInAsP/InP integrated ridge laser with a butt-jointed transparent optical waveguide fabricated by single-step metalorganic vapor-phase epitaxy
002B67 (1990) Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
002C38 (1989) Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
Wicri

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