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Serveur d'exploration sur l'Indium

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Le cluster A. Lefebvre - Y. Androussi

Terms

22A. Lefebvre
16Y. Androussi
8T. Benabbas
11J. Di Persio

Associations

Freq.WeightAssociation
1414A. Lefebvre - Y. Androussi
88T. Benabbas - Y. Androussi
88A. Lefebvre - T. Benabbas
66A. Lefebvre - J. Di Persio
Documents par ordre de pertinence
000C47 (2003-04-01) Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000F71 (2002) Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands
001543 (1999-08-15) High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)
001544 (1999-08-15) A finite-element study of strain fields in vertically aligned InAs islands in GaAs
001635 (1999) Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots
001925 (1998) Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy
001C83 (1997) Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
001D58 (1996-09-01) Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
001F59 (1996) Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures
000D42 (2003) Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
001213 (2001) LACBED measurement of the chemical composition of a thin InxGa1-x as layer buried in a GaAs matrix
001267 (2001) Determination of the composition of coherently strained islands by transmission electron microscopy
002044 (1995-06-19) Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures
002260 (1994-08-29) Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures
002430 (1994) Cross-slip in the first stages of plastic relaxation in InxGa1-xAs/GaAs heterostructures
002857 (1992) Intrinsic strain at slightly mismatched InGaAs/InP interfaces as studied by transmission electron microscopy
002A13 (1991) Interactions of misfit dislocations in InxGa1-xAs/GaAs interfaces
002A73 (1991) A new type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices
002C50 (1989) On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures
002C55 (1989) Misfit dislocations in In0.15Ga0.85As/GaAs strained-layer superlattices
000D47 (2003) Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
001007 (2002) Growth optimisation of GaInN/GaN multiple quantum well structures: Application to RCLED devices
001424 (2000) Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer
001D72 (1996-07-15) Transmission electron microscopy and cathodoluminescence of tensile-strained GaxIn1-xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation
002374 (1994) Multiplication of misfit dislocations in InxGa1-xAs/GaAs heterostructures
002570 (1993) Raman scattering in InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy
002603 (1993) On the formation of edge dislocations in InxGa1-xAs/GaAs heterostructures with x<0.20
002895 (1992) Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
Wicri

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