| 000411 (2009) |
| Optical, structural investigations and band-gap bowing parameter of GaInN alloys |
| 000420 (2009) |
| Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties |
| 000421 (2009) |
| MOVPE growth of InN buffer layers on sapphire |
| 000438 (2009) |
| InN excitonic deformation potentials determined experimentally |
| 000452 (2009) |
| Growth of InN films and nanostructures by MOVPE |
| 000474 (2009) |
| Alternative precursors for MOVPE growth of InN and GaN at low temperature |
| 002959 (1991) |
| Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells |
| 000082 (2012) |
| Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys |
| 000115 (2012) |
| Investigation of indium nitride for micro-nanotechnology |
| 000219 (2011) |
| Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides |
| 000896 (2005) |
| Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms |
| 000A05 (2005) |
| Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots |
| 000A89 (2004) |
| Raman scattering in hexagonal InN under high pressure |
| 000B92 (2004) |
| Absorption and Raman scattering processes in InN films and dots |
| 000C01 (2003-12-15) |
| Isoelectronic traps in heavily doped GaAs:(In,N) |
| 000C30 (2003-07-15) |
| Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems |
| 000E82 (2002-01-21) |
| Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes |
| 000E99 (2002) |
| The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes |
| 001114 (2001-03-12) |
| Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes |
| 001115 (2001-02-26) |
| High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy |
| 001187 (2001) |
| Optical properties of self-assembled InGaN/GaN quantum dots |
| 001265 (2001) |
| Dual contribution to the stokes shift in InGaN-GaN Quantum wells |
| 001269 (2001) |
| Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy |
| 001276 (2001) |
| Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect |
| 002412 (1994) |
| Excition binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures growth with built-in piezoelectric field |
| 002594 (1993) |
| Optical properties of single and double (111)-grown (Ga,In)As-GaAs strained-layer quantum wells under strong photo-injection |
| 002604 (1993) |
| Observation of many-body effects and band-gap renormalization in low-dimensional systems with built-in piezoelectric fields |
| 002702 (1993) |
| Dramatic photoinduction of hole tunneling in double quantum wells with built-in piezoelectric fields |
| 002792 (1992) |
| Uniaxial-stress determination of the symmetry of exciton associated with the miniband dispersion in (Ga,In)As-GaAs superlattices |
| 002829 (1992) |
| Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields |
| 002865 (1992) |
| Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells |
| 000760 (2006) |
| Superconductivity of InN with a well defined Fermi surface |
| 000876 (2005) |
| Terahertz investigation of high quality indium nitride epitaxial layers |
| 000B71 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000C00 (2003-12-15) |
| Raman scattering in large single indium nitride dots: Correlation between morphology and strain |
| 000C14 (2003-10-06) |
| Indium nitride quantum dots grown by metalorganic vapor phase epitaxy |
| 000E21 (2002-11-15) |
| Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields |
| 002199 (1995) |
| Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells |
| 002644 (1993) |
| Influence of piezoelectric fields on Rhydberg energies in (Ga,In)As-GaAs single quantum wells embedded in p-i-n structures |
| 002671 (1993) |
| First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy |
| 002685 (1993) |
| Electronic structure and optical properties of (Ga, In)As-(Ga, Al)As quantum wells and superlattices under internal and external strain fields |
| 002826 (1992) |
| Optical transitions involving unconfined energy states in superlattices |
| 002913 (1992) |
| Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy |
| 000A70 (2004) |
| Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures |
| 000C53 (2003-03-10) |
| Determination of built-in electric fields in quaternary InAlGaN heterostructures |
| 000F25 (2002) |
| Small built-in electric fields in quaternary InAIGaN heterostructures |
| 001142 (2001) |
| The dependence of the optical energies on InGaN composition |
| 001674 (1999) |
| Recombination dynamics of excitons in III-nitride layers and quantum wells |
| 001D42 (1996-10-15) |
| Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions |
| 001D76 (1996-07-15) |
| Coupled LO-plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions |
| 002101 (1995) |
| Variational treatment of the exciton binding energy problem in low-dimensional systems with one marginal potential |
| 002348 (1994) |
| Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications |
| 002447 (1994) |
| A variational calculation of light-hole envelope functions and exciton binding energies in (Ga, In)As-GaAs quantum wells |
| 002684 (1993) |
| Electronic structure of (In,Ga)As-(Ga,Al)As strained-layer quantum wells |
| 002736 (1993) |
| Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions |
| 002820 (1992) |
| Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells |
| 002E54 (1987) |
| Exciton et polariton dans les semiconducteurs cubiques: étude de la réflectivité |
| 002F09 (1987) |
| Localization behavior of donor-related complexes in InP under hydrostatic pressure |
| 002F25 (1987) |
| Exciton-polaritons in InP: magnetoreflectance investigation |
| 002F80 (1986) |
| Theoretical investigation of the magnetodonors in a narrow gap semi-conductor under high pressure conditions |
