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Racine

Serveur d'exploration sur l'Indium

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Le cluster G. Hollinger - M. Gendry

Terms

64G. Hollinger
90M. Gendry
17J. Brault
59G. Guillot
39T. Benyattou
32P. Regreny
16G. Grenet
27G. Bremond

Associations

Freq.WeightAssociation
4545G. Hollinger - M. Gendry
1616J. Brault - M. Gendry
1414M. Gendry - T. Benyattou
2727G. Guillot - T. Benyattou
1414G. Hollinger - P. Regreny
1414G. Guillot - M. Gendry
1414G. Grenet - M. Gendry
1414G. Grenet - G. Hollinger
1414G. Bremond - M. Gendry
1313G. Bremond - G. Guillot
1212M. Gendry - P. Regreny
99G. Hollinger - T. Benyattou
99G. Guillot - G. Hollinger
88G. Hollinger - J. Brault
88G. Bremond - G. Hollinger
55J. Brault - T. Benyattou
55G. Grenet - P. Regreny
55G. Grenet - J. Brault
55G. Bremond - T. Benyattou
55G. Bremond - J. Brault
Documents par ordre de pertinence
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
000C22 (2003-08-15) Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000E22 (2002-11-15) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
000F55 (2002) Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001103 (2001-05) Growth of GaInTlAs layers on InP by molecular beam epitaxy
001242 (2001) Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy
001774 (1999) Alloying effects in self-assembled InAs/InP dots
001803 (1998-11-16) Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
000B93 (2004) A comparative study of gatlas, intlas and gaintlas grown by SSMBE : The detrimental effect of indium
001385 (2000) Strained InAs nanostructures self-organised on high-index InP(113)B
001388 (2000) Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)
001A13 (1998) Electro-absorption modulator using a type-II quantum well in the InxGa1-xAs/InAlAs/InP system
001B15 (1997-06-16) Type II recombination and band offset determination in a tensile strained InGaAs quantum well
002170 (1995) High-sensitivity Hall sensors using GaInAs/AlInAs pseudomorphic heterostructures
002272 (1994-07) Optical properties of InAs/InP surface layers formed during the arsenic stabilization process
000366 (2010) 3D harnessing of light with photon cage
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000968 (2005) Feasibility of III-V on-silicon strain relaxed substrates
000973 (2005) Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors
000C38 (2003-05-15) Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
001229 (2001) InP 2D photonic crystal microlasers on silicon wafer: Room temperature operation at 1.55 μm
001501 (1999-12-06) High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach
001603 (1999-01-18) Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)
001725 (1999) Highly strained InxGa1-xAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 μm spectral range
001924 (1998) Surface spinodal decomposition in low temperature Al048In052As grown on InP(001) by molecular beam epitaxy
001A72 (1997-10-15) Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001)
001C31 (1997) Optical characterization methods of InP based micro-opto-electro-mechanical systems
001C57 (1997) InP-based micro-mechanical tunable and selective photodetector for WDM systems
001F27 (1996) In situ XPS investigation of indium surface segregation for Ga1-xInxAs and Al1-xInxAs alloys grown by MBE on InP(001)
001F29 (1996) Highly sensitive In0.75Ga0.25As/AlInAs Hall sensors
002031 (1995-08-28) Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP
002053 (1995-05-15) Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures
002288 (1994-05-15) X-ray-photoelectron-diffraction study of InAs/InP(001) heterostructures
002907 (1992) Electrical behavior of Yb ion in p- and n-type InP
002B52 (1990) Identification of the Fe acceptor llevel in Ga0.47In0.53As
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000330 (2010) Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000702 (2007) Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000786 (2006) Photoreflectance spectroscopy of self-organized InAs/InP(0 01) quantum sticks emitting at 1.55 μm
000819 (2006) Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000942 (2005) Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots
000A33 (2004-04-15) Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001)
000A85 (2004) STM and FIB nano-structuration of surfaces to localise InAs/InP(0 0 1) quantum dots
000B49 (2004) Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates
000C64 (2003-01-01) Two-dimensional hexagonal-shaped microcavities formed in a two-dimensional photonic crystal on an InP membrane
000D13 (2003) Photoconductive spectral analysis of InAs quantum dot under normal incidence
000D72 (2003) Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
000E88 (2002) Microlasers à cristaux photoniques en InP reporté sur silicium
000F70 (2002) Monolithic tunable InP-based vertical cavity surface emitting laser
001119 (2001-02-15) Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires on In1-xAlxAs/InP
001220 (2001) Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications
001294 (2000-12-01) InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation
001549 (1999-07-12) High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices
001622 (1999) Les super-réseaux de monocouches fractionnaires (InAs)n/(GaAs)0.26 épitaxiés sur InP par EJMSS pour les applications dans la gamme spectrale 2-2.5μm
001688 (1999) Optical and mechanical design of an InP based tunable detector for gas sensing applications
001724 (1999) Highly tunable and selective fabry Perot filter based on InP-air Bragg mirrors for W.D.M. applications
001921 (1998) Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
001994 (1998) Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001995 (1998) Highly selective 1.55 μm InP/air gap micromachined Fabry-Perot filter for optical communications
001D74 (1996-07-15) Simulation of the capacitance-voltage characteristics of a single-quantum-well structure based on the self-consistent solution of the Schrödinger and Poisson equations
001E80 (1996) Scanning tunneling microscopy study of the epitaxial growth of strained In0.82Ga0.18As layers on InP
001F48 (1996) Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well
001F73 (1996) Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
002023 (1995-09-01) Evidence for inhomogeneous growth rates in partially relaxed InGaAs/InP heterostructures
002072 (1995-02-15) High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions
002080 (1995-01-02) Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures
002083 (1995-01-01) Admittance spectroscopy of InAlAs/InGaAs single-quantum-well structure with high concentration of electron traps in InAlAs layers
002135 (1995) Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates
002136 (1995) Photoluminescence and band offsets of AlInAs/InP
002295 (1994-04-15) Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers
002351 (1994) Strain relaxation studied by photoluminescence by double crystal X-ray diffraction measurements in strained InGaAs
002581 (1993) Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells
002582 (1993) Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002744 (1993) A new encapsulation method of InP during post implantation annealing
002890 (1992) Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEM
002919 (1992) Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy
002945 (1991) Rôle de la zone interfaciale dans la qualité des propriétés électriques du système Al2O3/AsInP
002994 (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy
002A39 (1991) Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP
002B00 (1990) The passivation of InP by arsenic surface stabilization and Al2O3 deposition : correlations between interface chemistry and capacitance measurements
002C90 (1989) Absolute photoionization cross-sections of 3d ions in InP: a comparison between experiment and theory
002D06 (1988) Spectroscopie XPS d'oxydes et de sulfures d'InP: composés étalons et couches de passivation
002D19 (1988) Composition chimique des sulfures natifs formés sur InP par plasma indirect
002E31 (1987) Spectroscopie XPS d'oxydes et de sulfures d'InP: composés étalons et couches de passivation
002E39 (1987) Sulfuration assistée par plasma de InP
002E94 (1987) Properties of InP doped with Led ions
002F85 (1986) The donor level of vanadium in InP
003000 (1986) Properties of titanium in InP
003047 (1986) Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide
000008 (2013) Uniquely and arbitrarily shaped laser resonators using 2D InAsP/InP photonic crystals
000011 (2013) Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000060 (2013) Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000113 (2012) Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000120 (2012) InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
Wicri

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