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Serveur d'exploration sur l'Indium

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Le cluster G. Patriarche - L. Largeau

Terms

75G. Patriarche
17L. Largeau
42I. Sagnes
17E. Le Bourhis
18G. Saint-Girons
13A. Mereuta
22S. Bouchoule
13R. Raj

Associations

Freq.WeightAssociation
1616G. Patriarche - L. Largeau
1414G. Patriarche - I. Sagnes
1414E. Le Bourhis - G. Patriarche
1212G. Saint-Girons - I. Sagnes
1111G. Patriarche - G. Saint-Girons
1010A. Mereuta - I. Sagnes
99I. Sagnes - S. Bouchoule
77I. Sagnes - R. Raj
Documents par ordre de pertinence
000F75 (2002) Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
000F70 (2002) Monolithic tunable InP-based vertical cavity surface emitting laser
001073 (2001-10-01) Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001221 (2001) Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
001291 (2001) (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
000174 (2011) Structural analysis of site-controlled InAs/InP quantum dots
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000590 (2008) De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer
000617 (2007) Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
000708 (2007) Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer
000939 (2005) Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
000946 (2005) Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity
000A06 (2005) Conservative indentation flow throughout thin (011) InP foils
000A97 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000A98 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000B24 (2004) Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
000B37 (2004) Indentation punching through thin (011) InP
000B98 (2004) 1.55 μm VCSELs with InP/air-gap distributed bragg reflectors
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000E72 (2002-03-15) Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001410 (2000) Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001492 (2000) 1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
000025 (2013) Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000127 (2012) Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000400 (2009) Single photon sources using InAs/InP quantum dots
000519 (2008) Photonic crystal nanolasers with controlled spontaneous emission
000526 (2008) One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
000537 (2008) Nanoindentation response of a thin InP membrane
000667 (2007) Local electronic transport through InAs/InP(0 01) quantum dots capped with a thin InP layer studied by an AFM conductive probe
000735 (2007) 1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000768 (2006) Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
000A49 (2004-01-12) Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
000A81 (2004) Solid-solution strengthening in ordered InxGa1-xP alloys
000A86 (2004) Room-temperature continuous-wave laser operation of electrically-pumped 1.55 μm VECSEL
000A87 (2004) Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000B97 (2004) 2D AlGaAs/AlOx photonic crystal high-Q resonator around 1.5μm
000D11 (2003) Plastic deformation of III-V semiconductors under concentrated load
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
000F20 (2002) Strength enhancement of compensated strained InP/AlP superlattice
000F85 (2002) Low-load deformation of InP under contact loading; comparison with GaAs
001076 (2001-09-17) Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice
001133 (2001) Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
001194 (2001) Non-linear solid solution strengthening of InGaAs alloy
001207 (2001) MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001233 (2001) In-depth deformation of InP under a Vickers indentor
001350 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001351 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001395 (2000) Room-temperature plasticity of InAs
001434 (2000) InGaAsP/AlGaAs multiple wavelength vertical cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique
001468 (2000) Deformations induced by a Vickers indentor in InP at room temperature
001670 (1999) Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001671 (1999) Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001816 (1998-11) Quasi-CW room temperature operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
001940 (1998) Room-temperature continuous-wave operation VCSEL at 1.48 μm with Sb-based Bragg reflector
001953 (1998) Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP
001996 (1998) High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
001C39 (1997) Material flow at the surface of indented indium phosphide
000012 (2013) Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si
000060 (2013) Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000113 (2012) Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000116 (2012) Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys
000120 (2012) InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000172 (2011) Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
000237 (2011) Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
000286 (2010) Overview of the EU FP7-project HISTORIC
000322 (2010) Engineering of InAsP/InP quantum dot emission for long-distance Quantum communications
000513 (2008) RECENT DEVELOPMENTS OF InP-BASED QUANTUM DASHES FOR DIRECTLY MODULATED LASERS AND SEMICONDUCTOR OPTICAL AMPLIFIERS
000635 (2007) Photonic crystal slab reflectors for compact passive and active optical devices
000657 (2007) Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007) Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000678 (2007) Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
000734 (2007) 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000752 (2006) Towards a mid-infrared polaron laser using InAs/GaAs self-assembled quantum dots
000851 (2006) Compact Photonic devices based on 1D and 2D photonic crystal broadband reflectors
000871 (2005) Tuning a two-dimensional photonic crystal resonance via optical carrier injection
000963 (2005) GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000A74 (2004) Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
000B52 (2004) Fabrication of ultra-thin InP membranes and their application for high reflective mirrors in tunable vertical-cavity devices
000B61 (2004) Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers
000B81 (2004) Au/In2 bonding of InP-based MOEMS
000C25 (2003-08-15) Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
000C60 (2003-02-10) Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime
000C92 (2003) Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
000D61 (2003) Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000D93 (2003) Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
000E52 (2002-06-15) Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
001070 (2001-10-22) Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
001109 (2001-03-19) Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001323 (2000-08-28) Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities
001342 (2000-03-13) Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity
001352 (2000-01-17) Step-bunching instability in strained-layer superlattices grown on vicinal substrates
001363 (2000) Diodes électroluminescentes à microcavité pour le contrôle de l'émission spontanée
001372 (2000) Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver
001392 (2000) Simultaneously regenerated 4×40 Gbit/s dense WDM transmission over 10,000 km using single 40 GHz InP Mach-Zehnder modulator
001436 (2000) In-depth structure of rosette arms in indium phosphide
Wicri

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