Le cluster D. K. Maude - J. C. Portal
000846 (2006) | Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system | |
000C02 (2003-12-15) | Insulating states of a broken-gap two-dimensional electron-hole system | |
001263 (2001) | Edge effects in an insulating state of an electron-hole system in magnetic field | |
001278 (2001) | Breakdown of the quantum Hall effect in an electron-hole system | |
001317 (2000-09-11) | Metal-Insulator Oscillations in a Two-Dimensional Electron-Hole System | |
001829 (1998-09-15) | Magnetic breakdown in the semimetallic InAs/GaSb system | |
001E09 (1996-04-15) | Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice | |
002519 (1993) | Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes | |
002A20 (1991) | High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure | |
000B59 (2004) | Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures | |
001C70 (1997) | Growth of InAs/GaSb strained layer superlattices by MOVPE. III. Use of UV absorption to monitor alkyl stability in the reactor | |
001E78 (1996) | Short period superlattices under hydrostatic pressure | |
002051 (1995-05-15) | Influence of electrode Fermi energy on interband tunneling | |
002568 (1993) | Resonant and off-resonant phenomena in double-barrier interband tunneling structures | |
002964 (1991) | Transverse magnetic field effects on the resonant tunneling current | |
002B02 (1990) | The (InGa)As-5InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic field | |
002C46 (1989) | Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions | |
002F56 (1987) | A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure | |
003025 (1986) | First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands | |
001804 (1998-11-15) | Determination of the phase of magneto-intersubband scattering oscillations in heterojunctions and quantum wells | |
001B49 (1997-01-27) | Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure | |
001D35 (1996-11-04) | Magnetoresistance size effects in a three-dimensional lattice of InSb quantum dots | |
001F06 (1996) | Magnetoresistance oscillations due to intersubband scattering in a two-dimensional electron system | |
002379 (1994) | Magneto-transport investigation of Si-doped n+ Al0.48In0.52As : observation of the DX centre | |
002389 (1994) | Left and right tunnelling times of electrons from quantum wells in double-barrier heterostructures investigated by the stabilization method | |
002605 (1993) | Observation of a two dimensional hole gas in a GaInP/GaAs heterojunction | |
002B14 (1990) | Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction | |
002B34 (1990) | Magnetotransport measurements in GaInP/GaAs heterostructures | |
002D28 (1988) | Two-dimensional electron gas at a Ga0.47In0.53As/(AlxGa1-x)0.48In0.52As interface | |
002F84 (1986) | The effect of hydrostatic pressure on a Ga0.47In0.53As/InP heterojunction with three electric sub-bands | |
003024 (1986) | First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition | |
003048 (1986) | A study of n-type GaxInl-xAsyPl-y-InP quantum wells | |
000473 (2009) | Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers | |
000675 (2007) | Imaging of subbands in InAs/GaSb double quantum wells by low-temperature scanning tunneling spectroscopy | |
000760 (2006) | Superconductivity of InN with a well defined Fermi surface | |
000D37 (2003) | Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T | |
000E93 (2002) | X-ray scattering from epitaxial GaSb/InAs thin films below and above the critical thickness | |
001170 (2001) | Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling | |
001238 (2001) | High pressure as a tool to study electron localization | |
001C37 (1997) | Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature | |
001C40 (1997) | Magnetotunnelling and photoluminescence spectroscopy of self-assembled InAs quantum dots | |
001C45 (1997) | Long-wavelength (9.5-11.5 μm) microdisk quantum-cascade lasers | |
002874 (1992) | InGaSb/GaSb photodiodes growth by MOVPE | |
002A18 (1991) | Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers | |
002C58 (1989) | Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP | |
002E95 (1987) | Pressure-induced elimination of the hole gas in semimetallic GaSb-InAs-GaSb heterostructures | |
003001 (1986) | Pressure dependence of the electronic effective mass and effective g-factor in the narrow gap semiconductor InSb | |
003010 (1986) | Luminescence investigations of highly strained-layer InAs-GaAs superlattices | |
003037 (1986) | Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs | |
003064 (1985) | Two-dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition | |
003111 (1984) | Intraconduction band magneto-optical study of InSb under hydrostatic pressure |
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