| 002406 (1994) |
| Full polarization intensitivity of a 20 Gb/s strained-MQW electroabsorption modulator |
| 002219 (1995) |
| 20 Gbit/s high-performance integrated MQW TANDEM modulators and amplifier for soliton generation and coding |
| 002750 (1993) |
| 20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage |
| 002751 (1993) |
| 10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator |
| 002875 (1992) |
| InGaAsP/InGaAsP Multiple quantum-well modulator with improved saturation intensity and bandwidth over 20 GHz |
| 002883 (1992) |
| High-speed InGaAsP/InGaAsP MQW electroabsorption modulator with high optical power handling capacity |
| 002A49 (1991) |
| Efficient electroabsorption on InGaAsP/InGaAsP MQW optical waveguide |
| 001B96 (1997) |
| The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources |
| 001C11 (1997) |
| Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions |
| 001C44 (1997) |
| Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz |
| 001F30 (1996) |
| High-speed tandem of MQW modulators for coded pulse generation with 14-dB fiber-to-fiber gain |
| 002146 (1995) |
| Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion |
| 002209 (1995) |
| Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier |
| 002350 (1994) |
| Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm |
| 002410 (1994) |
| Experimental optimisation of MQW electroabsorption modulators with up to 40 GHz bandwidths |
| 001372 (2000) |
| Three-waveguide two-grating codirectional coupler for 1.3-/1.3+/1.5μm demultiplexing in transceiver |
| 001A84 (1997-09-29) |
| Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP |
| 001B52 (1997-01-06) |
| 1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy |
| 001D77 (1996-07-08) |
| Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP |
| 001E46 (1996) |
| Modulateurs électroabsorbants : applications pour les liaisons à haut débit |
| 002000 (1995-11-01) |
| Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration |
| 002130 (1995) |
| Proposal and demonstration of a symmetrical npipn electroabsorption modulator |
| 002132 (1995) |
| Polarization-independent filtering in a grating-assisted horizontal directional coupler |
| 002186 (1995) |
| Electroabsorption modulators for high-bit-rate optical communications : a comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP |
| 002340 (1994) |
| Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration |
| 002395 (1994) |
| InP-based 10-GHz bandwidth polarization diversity heterodyne photoreceiver with electrooptical adjustability |
| 002884 (1992) |
| High-frequency operation of very low voltage, 1.55μm single-mode optical waveguide modulator based on wannier-stark localization |
| 002904 (1992) |
| Electroabsorption modulator based on Wannier-Stark localization with 20 GHz/V efficiency |
| 000172 (2011) |
| Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth |
| 000659 (2007) |
| Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy |
| 000A27 (2004-05-24) |
| Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates |
| 001633 (1999) |
| Tunable filter with box-like spectral response for 1.28/1.32 μm duplexer application |
| 001670 (1999) |
| Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas |
| 001C02 (1997) |
| Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers |
| 001C59 (1997) |
| InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics |
| 001D20 (1997) |
| 20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications |
| 001D22 (1996-12-30) |
| Strained InGaAsP/InGaAsP/InAsP multi-quantum well structure for polarization insensitive electroabsorption modulator with high power saturation |
| 001F83 (1996) |
| 1.55μm polarisation insensitive InGaAsP strained MQW optical amplifier integrated with short spot-size converters |
| 002074 (1995-02-06) |
| Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio |
| 002078 (1995-01-15) |
| Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques |
| 002144 (1995) |
| Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser |
| 002171 (1995) |
| High temperature characteristics T0 and low threshold current density of 1.3μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers |
| 002274 (1994-06-27) |
| Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells |
| 002275 (1994-06-15) |
| Self-induced laterally modulated GaInP/InAsP structure grown by metal-organic vapor-phase epitaxy |
| 002375 (1994) |
| Monolithic integration of multiple quantum well DFB lasers and electroabsorption modulators |
| 002576 (1993) |
| Polarization splitter based on modal birefringence in InP/InGaAsP optical waveguide |
| 002743 (1993) |
| A new organoindium precursor for electronic materials |
| 002790 (1992) |
| Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP |
| 002825 (1992) |
| Optimization of optical waveguide modulators based on Wannier-Stark localization : an experimental study |
| 002882 (1992) |
| Highly thermally stable, high-performance InGaAsP : InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE |
| 002A21 (1991) |
| High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers |
| 002B06 (1990) |
| Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 μm |
| 002C26 (1989) |
| Very uniform epitaxy |
| 000025 (2013) |
| Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE |
| 000116 (2012) |
| Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys |
| 000241 (2011) |
| Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 μm emission |
| 000297 (2010) |
| Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content |
| 000321 (2010) |
| Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates |
| 000412 (2009) |
| Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission |
| 000510 (2008) |
| Recent advances in long wavelength quantum dot based lasers |
| 000541 (2008) |
| Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy |
| 000713 (2007) |
| Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization |
| 000734 (2007) |
| 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser |
| 000756 (2006) |
| Synchrotron high angular resolution microdiffraction analysis of selective area grown optoelectronic waveguide arrays |
| 000855 (2006) |
| Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers |
| 000A08 (2005) |
| Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection |
| 000A15 (2005) |
| Application of X-ray standing wave (XSW) technique for studies of Zn incorporation in InP epilayers |
| 000A97 (2004) |
| Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots |
| 000A98 (2004) |
| Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots |
| 000B17 (2004) |
| Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures |
| 000B45 (2004) |
| High frequency performance of 3-quantum well GaInNas/GaAs ridge waveguide lasers emitting at 1.35 micron |
| 000B95 (2004) |
| 9.7 GHz small-signal bandwidth of three-quantum well GaInNAs/GaAs laser diodes operating at 1.35 μm |
| 000B96 (2004) |
| 42 GHz bandwidth InGaAlAs/InP electro absorption modulator with a sub-volt modulation drive capability in a 50 nm spectral range |
| 000D82 (2003) |
| Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers |
| 000E38 (2002-08-26) |
| Simple method to diagnose the performance of electroabsorption modulators on InP using optical low-coherence reflectometry |
| 001006 (2002) |
| High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes |
| 001178 (2001) |
| Photoconductance measurements and Stokes shift in InGaN alloys |
| 001268 (2001) |
| Detection and localization of degradation damaged regions in 1.3 μm laser diodes on InP using low-coherence reflectometry |
| 001291 (2001) |
| (InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range |
| 001352 (2000-01-17) |
| Step-bunching instability in strained-layer superlattices grown on vicinal substrates |
| 001374 (2000) |
| TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures |
| 001392 (2000) |
| Simultaneously regenerated 4×40 Gbit/s dense WDM transmission over 10,000 km using single 40 GHz InP Mach-Zehnder modulator |
| 001410 (2000) |
| Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE |
| 001434 (2000) |
| InGaAsP/AlGaAs multiple wavelength vertical cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique |
| 001467 (2000) |
| Dense WDM (0.27/bit/s/Hz) 4×40 Gbit/s dispersion-managed transmission over 10 000 km with in-line optical regeneration by channel pairs |
| 001492 (2000) |
| 1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response |
| 001647 (1999) |
| Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine |
| 001648 (1999) |
| Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates |
| 001722 (1999) |
| Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm |
| 001723 (1999) |
| Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants |
| 001729 (1999) |
| Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine |
| 001775 (1999) |
| Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm |
| 001789 (1999) |
| +55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers |
| 001864 (1998-05-18) |
| Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP |
| 001938 (1998) |
| Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation |
| 001953 (1998) |
| Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP |
| 001956 (1998) |
| Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide |
| 001975 (1998) |
| Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application |
| 001C21 (1997) |
| Potential-inserted InGaAs-AlGaInAs shallow quantum wells for electro-optical modulation at 1.55 μm |
| 001C58 (1997) |
| InGaP/InAsP MQW complex-coupled DFB taperless laser with large spot size and high coupling efficiency |
