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Racine
Analysis
France
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Racine
Racine

Serveur d'exploration sur l'Indium

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Le cluster K. Ketata - M. Ketata

Terms

20K. Ketata
18M. Ketata
18S. Koumetz
16J. Marcon
7C. Dubois
5M. Ihaddadene

Associations

Freq.WeightAssociation
1818K. Ketata - M. Ketata
1717M. Ketata - S. Koumetz
1717K. Ketata - S. Koumetz
1616J. Marcon - K. Ketata
1515J. Marcon - M. Ketata
1414J. Marcon - S. Koumetz
77C. Dubois - S. Koumetz
66C. Dubois - M. Ketata
66C. Dubois - K. Ketata
55K. Ketata - M. Ihaddadene
Documents par ordre de pertinence
001272 (2001) Comparative models for diffusion of Be in InGaAs/InP heterostructures
001286 (2001) A model for diffusion of beryllium in InGaAs/InP heterostructures
001482 (2000) Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
001642 (1999) The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
001768 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001A31 (1998) Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
001045 (2002) Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001481 (2000) Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001665 (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001672 (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001778 (1999) A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
001985 (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism
001A32 (1998) Be diffusion in GaInAs homojunction structure grown by CBE
001A39 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing
000D83 (2003) Determination of beryllium and self-interstitial diffusion parameters in InGaAs
000E00 (2003) Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
001F91 (1995-12) Modélisation de la diffusion du Be dans les structures épitaxiales en InGaAs pour les dispositifs microoptoélectroniques
Wicri

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