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Racine

Serveur d'exploration sur l'Indium

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Le cluster A. Cappy - S. Bollaert

Terms

24A. Cappy
26S. Bollaert
19D. Theron
23M. Zaknoune
28Y. Cordier
16Y. Crosnier
13D. Ferre
13C. Gaquiere

Associations

Freq.WeightAssociation
1919A. Cappy - S. Bollaert
1010S. Bollaert - Y. Cordier
1313D. Theron - M. Zaknoune
1111M. Zaknoune - Y. Cordier
1111D. Theron - Y. Crosnier
1010D. Ferre - Y. Cordier
99M. Zaknoune - S. Bollaert
99A. Cappy - Y. Cordier
88M. Zaknoune - Y. Crosnier
88C. Gaquiere - Y. Crosnier
88C. Gaquiere - D. Theron
77D. Theron - Y. Cordier
55D. Theron - S. Bollaert
Documents par ordre de pertinence
001494 (2000) 0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001715 (1999) Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001787 (1999) 0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001991 (1998) InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
000D34 (2003) Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000E11 (2003) 60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001624 (1999) HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x
001700 (1999) Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001974 (1998) MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate
000954 (2005) High performances of InP channel power HEMT at 94 GHz
000A22 (2005) 94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
001726 (1999) High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001786 (1999) 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001788 (1999) 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
001898 (1998-01) Nonselective wet chemical etching of GaAs and AlGaInP for device applications
001A29 (1998) Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure
002451 (1994) 1W/mm power pseudomorphic HFET with optimised recess technology
002727 (1993) Characterization of GaAs and InGaAs double-quantum well heterostructure FET's
000598 (2008) Ballistic nanodevices for high frequency applications
000720 (2007) Ballistic nano-devices for high frequency applications
000748 (2006) Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
000841 (2006) Dwell-time related saturation of phase coherence in ballistic quantum dots
000877 (2005) Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
000989 (2005) Dwell-time-limited coherence in open quantum dots
000A39 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000A61 (2004) Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures
000B38 (2004) InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
000B39 (2004) InAlAs-InGaAs double-gate HEMTs on transferred substrate
000B78 (2004) Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000D42 (2003) Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000D47 (2003) Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
000E15 (2002-12-15) Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001059 (2001-12-01) Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001251 (2001) Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements
001259 (2001) Effects of mismatch strain and alloy composition on the formation of inas islands on InAIAs templates : Special issue papers
001271 (2001) Comparison of InAs islands self-assembled on pseudomorphic and metamorphic InAlAs buffer layers grown on GaAs substrate
001322 (2000-09) Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
001376 (2000) Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001441 (2000) High-power GaN MESFET on sapphire substrate
001453 (2000) Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage
001719 (1999) InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001782 (1999) 94-GHz MMIC CPW low-noise amplifier on InP
001967 (1998) Numerical analysis of device performance of metamorphic InyAl1-yAs/InxGa1-xAs (0.3≤x≤0.6) HEMT's on GaAs substrate
001997 (1998) High power added efficiency at 35GHz on InP DH HEMTs
001B70 (1997) Etude de la détermination de schémas équivalents de transistors sur InP pour la conception d'amplificateurs de puissance à 60 GHz
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate
002846 (1992) Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs : a new structure for high performance high electron mobility transistor realization
002A92 (1990) Ultra high transconductance 0•25 μm gate MESFET with strained InGaAs buffer layer
000126 (2012) Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000143 (2012) 480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000318 (2010) Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
000332 (2010) Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT
000495 (2008) Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
000666 (2007) MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
000730 (2007) AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
000733 (2007) A 200-GHz true E-mode low-noise MHEMT
000827 (2006) Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
000A13 (2005) CBr4 and be heavily doped InGaAs grown in a production MBE system
000C47 (2003-04-01) Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
000E58 (2002-06-03) Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
001267 (2001) Determination of the composition of coherently strained islands by transmission electron microscopy
001287 (2001) A 0.15-μm 60-Ghz high-power composite channel GaInAs/InP HEMT with low gate current
001569 (1999-05-24) Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications
001751 (1999) Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
001884 (1998-03) Bromine/methanol wet chemical etching of via holes for InP microwave devices
001C83 (1997) Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
001E30 (1996-02-01) Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field
002B70 (1990) Electron transport properties of strained InxGa1-xAs
002B82 (1990) Depletion and enhancement modes in InP MISFETs for power amplification
Wicri

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