Le cluster P. Boucaud - S. Sauvage
001203 (2001) | Mid-infrared second-order nonlinear susceptibility in InAs/GaAs quantum dots | |
001347 (2000-02-15) | Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots | |
001545 (1999-08-09) | Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots | |
001110 (2001-03-15) | Second-harmonic generation resonant with s-p transition in InAs/GaAs self-assembled quantum dots | |
001581 (1999-04-15) | Third-harmonic generation in InAs/GaAs self-assembled quantum dots | |
001790 (1998-12-28) | Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots | |
000D10 (2003) | Polaron relaxation in InAs/GaAs self-assembled quantum dots | |
000752 (2006) | Towards a mid-infrared polaron laser using InAs/GaAs self-assembled quantum dots | |
000E30 (2002-10-15) | Dephasing of intersublevel polarizations in InAs/GaAs self-assembled quantum dots | |
000E67 (2002-04-29) | Long Polaron Lifetime in InAs/GaAs Self-Assembled Quantum Dots | |
001217 (2001) | Intersublevel emission in InAs/GaAs quantum dots | |
001497 (1999-12-15) | Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots | |
000898 (2005) | Pump-probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots | |
000899 (2005) | Pump-probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots | |
001106 (2001-04-16) | Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots | |
000E50 (2002-06-17) | Temperature dependence of intersublevel absorption in InAs/GaAs self-assembled quantum dots | |
001817 (1998-10-15) | Resonant excitation of intraband absorption in InAs/GaAs self-assembled quantum dots | |
001A62 (1997-11-10) | Intraband absorption in n-doped InAs/GaAs quantum dots | |
001A73 (1997-10-01) | Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots | |
002641 (1993) | Infrared free-electron laser measurement of power limiting by two-photon absorption in InSb | |
001100 (2001-05-07) | Time-resolved probing of the Purcell effect for InAs quantum boxes in GaAs microdisks | |
000015 (2013) | The role of heavy-light-hole mixing on the optical initialization of hole spin in InAs quantum dots | |
000156 (2011) | The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots | |
000241 (2011) | Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 μm emission | |
000412 (2009) | Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission | |
000427 (2009) | Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots | |
000519 (2008) | Photonic crystal nanolasers with controlled spontaneous emission | |
000602 (2008) | Anisotropy of the electron Landé g factor in InAs/GaAs self-assembled quantum dots | |
000630 (2007) | Spin lifetime from the Hanle effect and fine structure of excitonic levels in InAlAs/AlGaAs quantum dots | |
000633 (2007) | Role of hyperfine interaction on electron spin optical orientation in charge-controlled InAs-GaAs single quantum dots | |
000746 (2006) | Two time scales of the electron-hole spin relaxation in InAs/GaAs quantum dots | |
000774 (2006) | Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots | |
000951 (2005) | Hole-LO phonon interaction in InAs/GaAs quantum dots | |
000974 (2005) | Exciton spin manipulation in inAs/GaAs quantum dots : Exchange interaction and magnetic field effects | |
000983 (2005) | Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots | |
000A97 (2004) | Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots | |
000A98 (2004) | Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots | |
000C36 (2003-06-01) | Heat transfer mapping in 3-5 μm planar light emitting structures | |
000D88 (2003) | Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength | |
000E83 (2002-01-15) | Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots | |
001145 (2001) | Terahertz-frequency intraband absorption in semiconductor quantum dot molecules | |
001343 (2000-03-01) | Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor | |
001515 (1999-11-15) | Strong Electron-Phonon Coupling Regime in Quantum Dots: Evidence for Everlasting Resonant Polarons | |
001532 (1999-09-27) | High-Q wet-etched GaAs microdisks containing InAs quantum boxes | |
001575 (1999-05-03) | Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy | |
001657 (1999) | Strong Purcell effect for InAs quantum boxes in three-dimensional solid-state microcavities : Special section on electromagnetic crystal structures, design, synthesis, and applications | |
001690 (1999) | Novel prospects for self-assembled InAs/GaAs quantum boxes | |
001996 (1998) | High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy | |
001B31 (1997-05-05) | Structural study of InAs quantum boxes grown by molecular beam epitaxy on a (001) GaAs-on-Si substrate | |
001D78 (1996-07-01) | Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP | |
002022 (1995-09-01) | Third-order nonlinearities and coherent transient grating effects of narrow-gap semiconductors in the midinfrared | |
002035 (1995-08-01) | Photoluminescence study of band-gap alignment of intermixed InAsP/InGaAsP superlattices | |
002063 (1995-03-01) | Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors | |
002175 (1995) | Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scale | |
002617 (1993) | Monolayer scale study of segregation effects in InAs/GaAs heterostructures | |
002638 (1993) | Intermixing of GaInP/GaAs multiple quantum wells | |
002658 (1993) | High resolution in situ measurement of the surface composition of InxGa1-xAs and InxAl1-xAs at growth temperature | |
002662 (1993) | Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy | |
002844 (1992) | Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures | |
002878 (1992) | In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As | |
002C77 (1989) | Experimental probing of quantum-well Eigenstates |
![]() | This area was generated with Dilib version V0.5.77. | ![]() |