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Serveur d'exploration sur l'Indium

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Le cluster B. Martin - H. Bissessur

Terms

9B. Martin
8H. Bissessur
19F. Gaborit
11P. Pagnod-Rossiaux

Associations

Freq.WeightAssociation
66B. Martin - H. Bissessur
66B. Martin - F. Gaborit
55F. Gaborit - P. Pagnod-Rossiaux
Documents par ordre de pertinence
002104 (1995) Tunable phased-array wavelength demultiplexer on InP
002452 (1994) 16channel phased array wavelength demultiplexer on InP with low polarisation sensitivity
002133 (1995) Polarisation-independent phased-array demultiplexer on InP with high fabrication tolerance
002134 (1995) Polarisation-independent phased-array demultiplexer on InP with high fabrication tolerance
002696 (1993) Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y/InP grown by gas source molecular beam epitaxy
001A05 (1998) Four-channel wavelength selector monolithically integrated on InP
001C65 (1997) High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
001F44 (1996) Extremely small polarization independent phased-array demultiplexers on InP
001F49 (1996) Etching of deep V-groove channels on a (001) InP substrate and regrowth by gas source molecular beam epitaxy
001F84 (1996) 1.31-1.55-μm phased-array demultiplexer on InP
002384 (1994) Low-loss fiber-chip coupling by InGaAsP/InP thick waveguides for guided-wave photonic integrated circuits
000A20 (2005) Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy
000D29 (2003) Multiwafer gas source MBE development for InGaAsP/InP laser production
000F52 (2002) Optical packet switching with lossless 16-channel InP monolithically integrated wavelength selector module
001289 (2001) 3.6-Mhz linewidth 1.55-μm monomode vertical-cavity surface-emitting laser
001350 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001351 (2000-02) Novel technologies for 1.55-μm vertical cavity lasers
001493 (2000) 0.7W in singlemode fibre from 1.48μm semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure
001784 (1999) 10-wavelength 200-GHz channel spacing emitter integrating DBR lasers with a PHASAR on InP for WDM applications
001785 (1999) 1-m W CW-RT monolithic VCSEL at 1.55 μm
001816 (1998-11) Quasi-CW room temperature operation of 1.52 μm InGaAsP/AlGaAs vertical cavity lasers obtained by localised fusion
001C14 (1997) Room-temperature pulsed operation of 1.3 μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors
001C68 (1997) High performance 1.3 μm SLMQW BRS lasers for 85°C operation
001D64 (1996-08-26) Response to ′′Comment on ′Accurate refractive index measurements of doped and undoped InP by a grating coupling technique′ ′′ [Appl. Phys. Lett. 69, 1332 (1996)]
001D88 (1996-06-15) Splitting of electronic levels with positive and negative angular momenta in In0.53Ga0.47As/InP quantum dots by a magnetic field
001E11 (1996-04-15) Subband renormalization in dense electron-hole plasmas in In0.53Ga0.47As/InP quantum wires
002427 (1994) Deep etched InGaAs/InP quantum dots with strong lateral confinement effects
002649 (1993) InP digital optical swithc: key element for guided-wave photonic switching
002A23 (1991) High quality InP and In1-xGaxAsyP1-y grown by gas source MBE
Wicri

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