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Serveur d'exploration sur l'Indium

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Le cluster J. M. Moison - M. Bensoussan

Terms

16J. M. Moison
8M. Bensoussan
6F. Houzay

Associations

Freq.WeightAssociation
66J. M. Moison - M. Bensoussan
66F. Houzay - J. M. Moison
Documents par ordre de pertinence
003026 (1986) Epitaxial regrowth of an InAs surface on InP: an example of artificial surfaces
001E79 (1996) Self-organized growth of InAs/GaAs quantum boxes
002323 (1994-01-10) Self-organized growth of regular nanometer-scale InAs dots on GaAs
002861 (1992) Interaction of atomic hydrogen with native oxides of InP(100)
002912 (1992) Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition
002A99 (1990) Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates
002E63 (1987) Two-photon photoemission study of the empty states of InP(100)
002E73 (1987) Surface recombination, surface states and Fermi level pinning
002F48 (1987) Commensurate and incommensurate phase transitions of the (001)InAs surface under changes of bulk lattice constant, as chemical potential, and temperature
003015 (1986) Influence of the near-band-edge surface states on the luminescence efficiency of InP
003095 (1984) Surface defects induced by pulsed-laser processing of semiconductors and their low-temperature annealing
001073 (2001-10-01) Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001207 (2001) MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELs
001323 (2000-08-28) Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities
001C62 (1997) Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux
002142 (1995) Optical investigation of the self-organized grown of InAs/GaAs quantum boxes
002D36 (1988) Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices
002F83 (1986) The first steps of the sulfurization of III-V compounds
Wicri

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