| 001B50 (1997-01-15) |
| Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells |
| 000F53 (2002) |
| Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells |
| 001201 (2001) |
| Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE |
| 001283 (2001) |
| Absorption and emission of (In, Ga)N/GaN quantum wells grown by molecular beam epitaxy |
| 001C84 (1997) |
| Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions |
| 002050 (1995-05-15) |
| Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy |
| 002646 (1993) |
| Indium segregation and misorientation effects on the optical properties of MBE grown In0.35Ga0.65As/GaAs quantum wells |
| 002287 (1994-05-16) |
| Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy |
| 001108 (2001-04-01) |
| Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure |
| 001185 (2001) |
| Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE |
| 001324 (2000-08-28) |
| InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K |
| 001422 (2000) |
| MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization |
| 001685 (1999) |
| Optical properties of (In, Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates |
| 001919 (1998) |
| The determination of e14 in (111)B-grown (In, Ga)As/GaAs strained layers |
| 001A17 (1998) |
| Effect of indium surface segregation on excitonic properties in (111)B-grown (In, Ga)As/GaAs multiple quantum wells |
| 002304 (1994-03-21) |
| Monolayer thickness control of InxGa1-xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy |
| 002583 (1993) |
| Photoluminescence studies in strained InAs/InP quantum wells grown by hybride vapour-phase epitaxy |
| 000D55 (2003) |
| In surface segregation in InGaN/GaN quantum wells |
| 000E82 (2002-01-21) |
| Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes |
| 001000 (2002) |
| In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes |
| 001078 (2001-09-15) |
| Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures |
| 001114 (2001-03-12) |
| Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes |
| 001115 (2001-02-26) |
| High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy |
| 001138 (2001) |
| Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001175 (2001) |
| Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes |
| 001178 (2001) |
| Photoconductance measurements and Stokes shift in InGaN alloys |
| 001230 (2001) |
| InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum |
| 001231 (2001) |
| InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties |
| 001276 (2001) |
| Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect |
| 001310 (2000-10-15) |
| Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001447 (2000) |
| GaN and GaInN quantum dots : an efficient way to get luminescence in the visible spectrum range |
| 001454 (2000) |
| Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots |
| 001499 (1999-12-13) |
| Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth |
| 001516 (1999-11-15) |
| Optical spectroscopy study of the phase of the reflection coefficient of a single quantum well in the exciton resonance region |
| 001860 (1998-06-15) |
| Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy |
| 001920 (1998) |
| Temperature dependence of quantized states in (111)B-grown (In, Ga)As/GaAs multiple quantum well p-i-n diodes |
| 001955 (1998) |
| Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy |
| 001A48 (1997-12-15) |
| Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells |
| 001B38 (1997-04-01) |
| Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces |
| 001C29 (1997) |
| Optical investigation of piezoelectric field effects on excitonic properties in (111)N-grown (In, Ga)As/GaAs quantum wells |
| 001C52 (1997) |
| Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures |
| 001C94 (1997) |
| Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties |
| 001E33 (1996-01-15) |
| Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001) |
| 002140 (1995) |
| Origin of the blue shift observed in highly strained (Ga, In)As quantum wells grown on GaAs(001) vicinal surfaces |
| 002671 (1993) |
| First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy |
| 000521 (2008) |
| Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots |
| 000758 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000782 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000895 (2005) |
| Resonant Raman spectroscopy on InN |
| 000912 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000913 (2005) |
| Optical properties of InN related to surface plasmons |
| 000945 (2005) |
| Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes |
| 000A41 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000B15 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000B69 (2004) |
| Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy |
| 000B71 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000D98 (2003) |
| Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire |
| 000E99 (2002) |
| The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes |
| 000F21 (2002) |
| Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells |
| 001187 (2001) |
| Optical properties of self-assembled InGaN/GaN quantum dots |
| 001265 (2001) |
| Dual contribution to the stokes shift in InGaN-GaN Quantum wells |
| 001269 (2001) |
| Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy |
| 001563 (1999-06-14) |
| GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy |
| 001698 (1999) |
| Molecular beam epitaxy growth of nitride materials |
| 001718 (1999) |
| Indirect observation of single-exciton quantum beats in the time-resolved reflection of a single quantum well |
| 001738 (1999) |
| Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE |
| 001880 (1998-03-02) |
| Real time control of InxGa1-xN molecular beam epitaxy growth |
| 001A47 (1997-12-15) |
| Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells |
| 001B34 (1997-04-15) |
| Surface segregation in (Ga,In)As/GaAs quantum boxes |
| 001D86 (1996-06-17) |
| Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001) |
| 001E82 (1996) |
| Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs : a complementary study |
| 002113 (1995) |
| Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures |
| 002141 (1995) |
| Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C |
| 002260 (1994-08-29) |
| Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures |
| 002345 (1994) |
| Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates |
| 002414 (1994) |
| Epitaxial growth and kinetic study of mismatched (Ga,In)As/InP layers grown by hydride vapour phase epitaxy |
| 002431 (1994) |
| Critical thickness for islanded growth of highly strained InxGa1-xAs on GaAs(001) |
| 002552 (1993) |
| Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates |
| 002588 (1993) |
| Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials |
| 002593 (1993) |
| Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells |
| 002633 (1993) |
| Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells |
| 002653 (1993) |
| Improvement of the growth of InxGa1-xAs on GaAs (001) using Te as surfactant |
| 002673 (1993) |
| Extension of the layer-by-layer growth regime of InxGa1-xAs on GaAs (001) |
| 002681 (1993) |
| Epitaxial growth of highly strained InxGa1-xAs on GaAs(001) : the role of surface diffusion length |
| 002803 (1992) |
| Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001) |
| 002916 (1992) |
| Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers |
| 002994 (1991) |
| Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy |
| 000126 (2012) |
| Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes |
| 000205 (2011) |
| Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds |
| 000495 (2008) |
| Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures |
| 000651 (2007) |
| Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions |
| 000705 (2007) |
| Current status of AlInN layers lattice-matched to GaN for photonics and electronics |
| 000730 (2007) |
| AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination |
| 000767 (2006) |
| Structural characterisation of Sb-based heterostructures by X-ray scattering methods |
| 000A11 (2005) |
| Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells |
| 000D49 (2003) |
| Indium surface segregation in AlSb and GaSb |
| 000E27 (2002-10-28) |
| Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures |
| 000E94 (2002) |
| Vertical cavity InGaN LEDs grown by MOVPE |
| 001176 (2001) |
| Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers |
| 001234 (2001) |
| In situ etching at InGaAs/GaAs quantum well interfaces |
