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Serveur d'exploration sur l'Indium

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Le cluster M. Riet - S. Blayac

Terms

13M. Riet
8S. Blayac
8P. Berdaguer
11A. Konczykowska
7P. Andre
13J. Godin

Associations

Freq.WeightAssociation
70.686M. Riet - S. Blayac
50.625P. Berdaguer - S. Blayac
60.684A. Konczykowska - P. Andre
80.669A. Konczykowska - J. Godin
80.615J. Godin - M. Riet
60.588M. Riet - P. Berdaguer
60.502A. Konczykowska - M. Riet
50.490J. Godin - S. Blayac
Documents par ordre de pertinence
001232 (2001) InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
000F98 (2002) InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits
001030 (2002) Design of high-speed master-slave D-type flip-flop in InP DHBT technology
001428 (2000) Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
000D01 (2003) Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors
000D36 (2003) Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000F64 (2002) Mux-driver-EAM in single module - a solution for ultra-high bit rate applications
000437 (2009) InP DHBT selector-driver with 2 × 2.7 V swing for 100 Gbit/s operation
001055 (2002) 40 Gbit/s master-slave D-type flip-flop in InP DHBT technology
001B73 (1997) Conception et réalisation de circuits de décision multivalués à 40 Gbit/s en technologie TBH InP
000076 (2013) 70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process
000179 (2011) Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses
000204 (2011) Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design
001054 (2002) 48 Gbit/s InP DHBT MS-DFF with very low time jitter
001120 (2001-02-15) Low Frequency Noise of InP/InGaAs Heterojunction Bipolar Transistors
000277 (2010) Preliminary results of storage accelerated aging test on InP/InGaAs DHBT
000734 (2007) 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000C48 (2003-04-01) Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors
000E75 (2002-03-01) Resonant electromagnetic field cavity between scanning tunneling microscope tips and substrate
001556 (1999-07) Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma
001B62 (1997) Phototransistor TBH InGaAs/InP pour conversion optique/microondes
001B71 (1997) Etude analytique des performances d'un mélangeur en cellule de Gilbert à base de TBH : Comparaison entre les technologies GaAs et InP
002454 (1994) (NH4)2Sx passivation treatment and UVCVD stabilisation for GaInP/GaAs heterojunction bipolar transistors
Wicri

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