Serveur d'exploration sur l'Indium

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Le cluster J. N. Patillon - J. P. Andre

Terms

9J. N. Patillon
19J. P. Andre
18O. Krebs
49P. Voisin
5S. Cortez
6E. Lugagne-Delpon
12M. Voos

Associations

Freq.WeightAssociation
90.688J. N. Patillon - J. P. Andre
60.197J. P. Andre - P. Voisin
180.606O. Krebs - P. Voisin
50.527O. Krebs - S. Cortez
60.350E. Lugagne-Delpon - P. Voisin
50.319P. Voisin - S. Cortez
70.289M. Voos - P. Voisin

Documents par ordre de pertinence
002856 (1992) Investigations of MOCVD-grown AllnAs-InP type II heterostructures
002832 (1992) Observation of laser emission in an InP-AlInAs type II superlattice
000C97 (2003) Spin polarization dynamics in n-doped InAs/GaAs quantum dots
000E24 (2002-11-11) Optically Driven Spin Memory in n-Doped InAs-GaAs Quantum Dots
000F23 (2002) Spin dynamics of neutral and charged excitons in InAs/GaAs quantum dots: towards Q-bit implementation?
001094 (2001-06-15) Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots
001122 (2001-01-15) Excitonic contributions to the quantum-confined Pockels effect
001C47 (1997) Investigations of giant 'forbidden' optical anisotropy in GaInAs-InP quantum well structures
002413 (1994) Evidence of non-communitativity of band discontinuities in InP-Al(IN)As-Ga(In)As heterostructures
002678 (1993) Evidences of non-commutativity and non-transivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
002B25 (1990) Optical properties of As-etched and regrown InP/InGaAs quantum wires and dots
002B66 (1990) Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots
000633 (2007) Role of hyperfine interaction on electron spin optical orientation in charge-controlled InAs-GaAs single quantum dots
000774 (2006) Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots
000983 (2005) Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots
000991 (2005) Direct observation of the electron spin relaxation induced by nuclei in quantum dots
001341 (2000-03-15) Light-heavy hole mixing and in-plane optical anisotropy of InP-AlxIn1-xAs type-II multiquantum wells
001533 (1999-09-27) Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells
001640 (1999) The quantum confined Pockels effect in InGaAs-based multi-quantum wells
001858 (1998-06-29) Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects
001B51 (1997-01-15) Band discontinuities in InxGa1-xAs-InP and InP-AlyIn1-yAs heterostructures: Evidence of noncommutativity
001C21 (1997) Potential-inserted InGaAs-AlGaInAs shallow quantum wells for electro-optical modulation at 1.55 μm
001C66 (1997) High power saturation, polarization insensitive electroabsorption modulator with spiked shallow wells
001D65 (1996-08-26) Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect
001E98 (1996) Observation of giant birefringence and dichroism in InP-AlInAs type II superlattices
002241 (1994-10-24) High-efficiency energy up-conversion by an ''Auger fountain'' at an InP-AlInAs type-II heterojunction
002261 (1994-08-15) Resonant second-harmonic generation in type-II heterostructures of InP/Al0.48In0.52As
002908 (1992) Electric and magnetic field induced dimensionality reduction in InGaAs-GaAs superlattices
002961 (1991) Uniformity-optical properties of GaInP-GaAlInP layers grown by MOVPE
002A24 (1991) High optical and electrical quality GaInAs/InP, GaAs/InP double heterostructures for optoelectronic integration
002B26 (1990) Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure
002B27 (1990) Optical investigation of the band offsets in an InGaAs-InGaAsP-InP double-step quantum well
002C32 (1989) Study of hopping in two dimensional electron gas in InGaAs/InP heterostructures with two subbands
002C68 (1989) III-V alloys and their potential for visible emitter applications
002D62 (1988) Optical studies of misfit strain effects in GaxIn1-x P epitaxial layers on (001) GaAs substrates
002D77 (1988) Investigations of the quantum photovoltaic effect in InAs-GaSb semiconductor superlattices
002E99 (1987) Photoluminescence investigation of InGaAS-InP quantum wells
003010 (1986) Luminescence investigations of highly strained-layer InAs-GaAs superlattices
000630 (2007) Spin lifetime from the Hanle effect and fine structure of excitonic levels in InAlAs/AlGaAs quantum dots
001659 (1999) Spin-splitting of the subbands of InGaAs-InP and other 'no common atom' quantum wells
001818 (1998-10-15) Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect
001C17 (1997) Relaxation of microcavity polariton
001E62 (1996) Time-resolved luminescence in InP/AlInAs type II quantum-well structures
001F16 (1996) Investigation of low power all-optical bistability in an InGaAs-InAlAs superlattice
002037 (1995-07-10) High performance polarization insensitive electroabsorption modulator based on strained GaInAs-AlInAs multiple quantum wells
002068 (1995-03) Etude de faisabilité de modulateurs électroabsorbants en onde guidée insensibles à la polarisation
002163 (1995) Investigation of low-power all-optical bistability in an InGaAs-InAlAs superlattice
002274 (1994-06-27) Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells
002312 (1994-02-07) Low power all-optical bistability in InGaAs-AlInAs superlattices: Demonstration of a wireless self-electro-optical effect device operating at 1.5 μm
002630 (1993) Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device
002825 (1992) Optimization of optical waveguide modulators based on Wannier-Stark localization : an experimental study
002884 (1992) High-frequency operation of very low voltage, 1.55μm single-mode optical waveguide modulator based on wannier-stark localization
002A89 (1990) Wannier-Stark quantization and its applications to electro-optical modulation
002A90 (1990) Very low drive voltage optical waveguide modulation in an InGaAs/InAIAs superlattice
002B04 (1990) Superlattice under parallel electric and magnetic fields
002B71 (1990) Electron minibands and Wannier-Stark quantization in an Ino0.15Ga0.85As-GaAs strained-layer superlattice
002C31 (1989) Substrate-driven ordering microstructure in GaxIn1-xP alloys
002C49 (1989) Optical investigation of the band structure of InAs/GaAs short-period superlattices
002D41 (1988) Some properties of semiconductor superlattices
002E21 (1988) Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy
002E25 (1988) Blue shift of the absorption edge in AlGalnAs-GalnAs superlattices: proposal for an original electro-optical modulator
002F79 (1986) Transient photovoltaic effect in semiconductor superlattices
002F89 (1986) Spectroscopic ellipsometry study of InP, GaInAs, and GaInAs/InP heterostructures
002F99 (1986) Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands
003023 (1986) Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE

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