| 002978 (1991) |
| Spatial investigation of an iron-doped indium phosphide ingot |
| 002A14 (1991) |
| Inhomogeneity in a semi-insulating indium phosphide ingot |
| 002B08 (1990) |
| Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide |
| 002F00 (1987) |
| Observation of cellular structures of defects in semi-insulating InP-Fe |
| 002F01 (1987) |
| Nondiffusion and 1•54 μm luminescence of erbium implanted in InP |
| 001F41 (1996) |
| Feasibility of 1.5 μm staircase solid state photomultipliers in the AlGaSb/GaInAsSb system |
| 002B90 (1990) |
| Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements |
| 002B93 (1990) |
| Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples |
| 002C48 (1989) |
| Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment |
| 002D47 (1988) |
| Schottky and field-effect transistor fabrication on InP and GalnAs |
| 002E07 (1988) |
| Erbium implanted in III-V materials |
| 002E26 (1988) |
| Behaviour of erbium implanted in InP |
| 002E61 (1987) |
| X-ray topography and TEM studies of (Ga,Fe)-double-doped LEC grown InP crystals |
| 002E94 (1987) |
| Properties of InP doped with Led ions |
| 002F18 (1987) |
| Gold diffusion in InP |
| 002F96 (1986) |
| Residual sulphur and silicon doping in InP and GaInAs |
| 003065 (1985) |
| Shallow p+ layers in In0.53Ga0.47As by Hg implantation |
| 002367 (1994) |
| Photon tunneling from semiconductor surfaces to atomic forcxe microscopy probes |
| 002562 (1993) |
| Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers |
| 002943 (1991) |
| Tomographie par diffusion laser dans les mono et polycristaux : révélation et configuration tridimensionnelle des défauts |
| 002A38 (1991) |
| Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP) |
| 002B77 (1990) |
| Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors |
| 002B87 (1990) |
| Characterisation of semi-insulating InP:Fe |
| 002C17 (1989) |
| Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation |
| 002D44 (1988) |
| Short range association of EL2 with dislocations in GaAs-In materials |
| 002E68 (1987) |
| Thermal activation of glide in InP single crystals |
| 002E69 (1987) |
| Thermal activation of deformation in S-doped InP single crystals |
| 002E98 (1987) |
| Photoluminescence studies of Mg and Hg implanted Ga0,47In0,53As |
| 002F11 (1987) |
| Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy |
| 002F43 (1987) |
| Defect structures in InP crystals by laser scanning tomography |
| 003000 (1986) |
| Properties of titanium in InP |
| 001697 (1999) |
| Multiple quantum well optically addressed spatial light modulators operating at 1.55 μm with high diffraction efficiency and high sensitivity |
| 001918 (1998) |
| The effect of the growth procedure and the InAs amount on the formation of strain-induced islands in the InAs/InP(001) system |
| 001998 (1998) |
| High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm |
| 001C99 (1997) |
| Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices |
| 001D21 (1997) |
| photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity |
| 001D87 (1996-06-17) |
| Photorefractive p-i-n diode quantum well operating at 1.55 μm |
| 001E72 (1996) |
| Structural aspects of the growth of InAs islands on InP substrate |
| 001F87 (1995-12-01) |
| Numerical analysis of photorefractive InP:Fe at large fringe contrast |
| 002018 (1995-09-25) |
| Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy |
| 002123 (1995) |
| Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga062In038As superlattices |
| 002398 (1994) |
| High resistivity InP :Ti,Be by GSMBE |
| 002795 (1992) |
| Transmission electron microscopy in situ investigation of dislocation mobilities in InP |
| 002907 (1992) |
| Electrical behavior of Yb ion in p- and n-type InP |
| 002A15 (1991) |
| Incremental creep testing : application to the plasticity of InP between 0.31 and 0.77 Tm |
| 002A26 (1991) |
| GaPSb : a new ternary material for Schottky diode fabrication on InP |
| 002B81 (1990) |
| Determination of H,C,N, and O in indium phosphide by secondary-ion mass spectrometry |
| 002E11 (1988) |
| Electrical activity of Yb in InP |
| 002E12 (1988) |
| EL2o distribution in the vicinity of dislocations in GaAs-In materials |
| 002E90 (1987) |
| Residual defect center in GaInAs/InP films grown by molecular beam epitaxy |
| 002F16 (1987) |
| Heat treatment effect on p type Zn doped InP substrates |
| 003041 (1986) |
| Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry |
| 003045 (1986) |
| An experimental evidence of the destruction of complex defects by the introduction of dislocations in InP |
| 003075 (1985) |
| Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing |
| 003096 (1984) |
| Surface accumulation of manganese in Si+-implanted and annealed semi-insulating indium phosphide |
| 003121 (1984) |
| Chromium absorption in InP |
