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Serveur d'exploration sur l'Indium

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Le cluster D. Decoster - J. P. Vilcot

Terms

24D. Decoster
19J. P. Vilcot
8J. Harari

Associations

Freq.WeightAssociation
160.749D. Decoster - J. P. Vilcot
80.577D. Decoster - J. Harari
70.568J. Harari - J. P. Vilcot
Documents par ordre de pertinence
000A09 (2005) Comparison between carried-induced optical index, Ioss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application
000B75 (2004) Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides
001B61 (1997) Phototransistors bipolaires à hétérojonction InP/InGaAs à guide d'onde
001B92 (1997) Theoretical study of p-i-n photodetectors' power limitations from 2.5 to 60 GHz
001F04 (1996) Modeling of microwave top illuminated PIN photodetector under very high optical power
002150 (1995) Modeling of waveguide PIN photodetectors under very high optical power
002997 (1991) Numerical simulation of avalanche photodiodes with guard ring
000B22 (2004) Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching
001031 (2002) DOS optical switch for microwave optical links based applications
001425 (2000) Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
001F55 (1996) Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor
002172 (1995) High optical power nonlinear dynamic response of AlInAs/GaInAs MSM photodiode
002842 (1992) Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications
002942 (1991) Etude et réalisation de circuits intégrés optoélectroniques microondes
002C93 (1989) 1.3-1.55 μm wavelength integrated photoreceiver using GaInAS/GaAs heteroepitaxy
002D69 (1988) Monolithic integration of a short-length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi-insulating substrate
002D70 (1988) Monolithic integrated photoreceiver for 1.3-1.55-μm wavelengths: association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy
000042 (2013) Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000351 (2010) Carrier induced optical index variations in InP waveguide diodes: the thermal effects contribution
000729 (2007) All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation
000885 (2005) Study of structural and optical properties of InSb-doped SiO2 thin films
001D60 (1996-09) Etude et développement de diodes lasers sur InP pour la génération de signaux millimétriques
002149 (1995) Modelling of self-aligned total internal reflection waveguide mirrors : an interlaboratory comparison
002194 (1995) Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimensional bipolar physical model
002238 (1994-11) Etude de photodétecteurs métal-semiconducteur-métal pour des applications micro-ondes
003003 (1986) Planar monolithic integrated photoreceiver for 1.3-1.55 um wavelength applications using GaInAs-GaAs heteroepitaxies
Wicri

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