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France
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Racine

Serveur d'exploration sur l'Indium

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Le cluster P. Lefebvre - T. Taliercio

Terms

21P. Lefebvre
12T. Taliercio
6A. Morel
7M. Gallart
10H. Mathieu
6J. Allegre

Associations

Freq.WeightAssociation
120.756P. Lefebvre - T. Taliercio
60.707A. Morel - T. Taliercio
50.546M. Gallart - T. Taliercio
50.645H. Mathieu - J. Allegre
60.535J. Allegre - P. Lefebvre
60.535A. Morel - P. Lefebvre
50.412M. Gallart - P. Lefebvre
50.345H. Mathieu - P. Lefebvre
Documents par ordre de pertinence
001114 (2001-03-12) Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26) High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001187 (2001) Optical properties of self-assembled InGaN/GaN quantum dots
001269 (2001) Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
001276 (2001) Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect
000C30 (2003-07-15) Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga,In)N/GaN systems
001674 (1999) Recombination dynamics of excitons in III-nitride layers and quantum wells
002820 (1992) Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells
000A05 (2005) Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
000C01 (2003-12-15) Isoelectronic traps in heavily doped GaAs:(In,N)
000E21 (2002-11-15) Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
000E82 (2002-01-21) Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
000E99 (2002) The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
001265 (2001) Dual contribution to the stokes shift in InGaN-GaN Quantum wells
000A46 (2004-02-02) Single photon emission from site-controlled pyramidal quantum dots
000A70 (2004) Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures
000C53 (2003-03-10) Determination of built-in electric fields in quaternary InAlGaN heterostructures
000D63 (2003) Generation of non-classical light by single quantum dots
000F25 (2002) Small built-in electric fields in quaternary InAIGaN heterostructures
001D42 (1996-10-15) Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions
002084 (1995-01) Modification des propriétés optiques des structures doubles puits quantiques GaAs-(Ga,In)As sous l'effet d'un champ électrique
002348 (1994) Structural investigations of InGaAs/InGaAsSLSs for optoelectronic device applications
002865 (1992) Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells
002959 (1991) Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells
002E54 (1987) Exciton et polariton dans les semiconducteurs cubiques: étude de la réflectivité
002F09 (1987) Localization behavior of donor-related complexes in InP under hydrostatic pressure
002F25 (1987) Exciton-polaritons in InP: magnetoreflectance investigation
002F80 (1986) Theoretical investigation of the magnetodonors in a narrow gap semi-conductor under high pressure conditions
Wicri

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