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Serveur d'exploration sur l'Indium

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Le cluster A. Cappy - S. Bollaert

Terms

24A. Cappy
26S. Bollaert
8S. Lepilliet
5H. Happy

Associations

Freq.WeightAssociation
190.761A. Cappy - S. Bollaert
70.505A. Cappy - S. Lepilliet
70.485S. Bollaert - S. Lepilliet
50.439H. Happy - S. Bollaert
Documents par ordre de pertinence
000E91 (2002) fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001624 (1999) HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x
001700 (1999) Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001057 (2002) 0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001782 (1999) 94-GHz MMIC CPW low-noise amplifier on InP
001967 (1998) Numerical analysis of device performance of metamorphic InyAl1-yAs/InxGa1-xAs (0.3≤x≤0.6) HEMT's on GaAs substrate
000720 (2007) Ballistic nano-devices for high frequency applications
000733 (2007) A 200-GHz true E-mode low-noise MHEMT
000748 (2006) Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
000841 (2006) Dwell-time related saturation of phase coherence in ballistic quantum dots
000877 (2005) Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
000989 (2005) Dwell-time-limited coherence in open quantum dots
000A39 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
000A61 (2004) Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures
000B38 (2004) InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductance
000B39 (2004) InAlAs-InGaAs double-gate HEMTs on transferred substrate
000D34 (2003) Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000E15 (2002-12-15) Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
001974 (1998) MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate
002618 (1993) Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate
000332 (2010) Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT
000598 (2008) Ballistic nanodevices for high frequency applications
000E11 (2003) 60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
001494 (2000) 0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001715 (1999) Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001751 (1999) Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
001787 (1999) 0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
002846 (1992) Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs : a new structure for high performance high electron mobility transistor realization
002A92 (1990) Ultra high transconductance 0•25 μm gate MESFET with strained InGaAs buffer layer
002B70 (1990) Electron transport properties of strained InxGa1-xAs
Wicri

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