| 000F53 (2002) |
| Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells |
| 001185 (2001) |
| Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE |
| 001201 (2001) |
| Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE |
| 001283 (2001) |
| Absorption and emission of (In, Ga)N/GaN quantum wells grown by molecular beam epitaxy |
| 001324 (2000-08-28) |
| InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K |
| 001422 (2000) |
| MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization |
| 001860 (1998-06-15) |
| Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy |
| 001B38 (1997-04-01) |
| Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces |
| 001C52 (1997) |
| Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures |
| 002050 (1995-05-15) |
| Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy |
| 002140 (1995) |
| Origin of the blue shift observed in highly strained (Ga, In)As quantum wells grown on GaAs(001) vicinal surfaces |
| 000D55 (2003) |
| In surface segregation in InGaN/GaN quantum wells |
| 000E82 (2002-01-21) |
| Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes |
| 001000 (2002) |
| In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes |
| 001078 (2001-09-15) |
| Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures |
| 001114 (2001-03-12) |
| Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes |
| 001115 (2001-02-26) |
| High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy |
| 001175 (2001) |
| Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes |
| 001178 (2001) |
| Photoconductance measurements and Stokes shift in InGaN alloys |
| 001230 (2001) |
| InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum |
| 001231 (2001) |
| InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties |
| 001276 (2001) |
| Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined stark effect |
| 001447 (2000) |
| GaN and GaInN quantum dots : an efficient way to get luminescence in the visible spectrum range |
| 001454 (2000) |
| Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots |
| 001499 (1999-12-13) |
| Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth |
| 001563 (1999-06-14) |
| GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy |
| 001A47 (1997-12-15) |
| Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells |
| 001B50 (1997-01-15) |
| Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells |
| 001C84 (1997) |
| Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions |
| 001D86 (1996-06-17) |
| Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001) |
| 001E33 (1996-01-15) |
| Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001) |
| 002287 (1994-05-16) |
| Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy |
| 002304 (1994-03-21) |
| Monolayer thickness control of InxGa1-xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy |
| 002345 (1994) |
| Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates |
| 002646 (1993) |
| Indium segregation and misorientation effects on the optical properties of MBE grown In0.35Ga0.65As/GaAs quantum wells |
| 000126 (2012) |
| Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes |
| 000521 (2008) |
| Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots |
| 000945 (2005) |
| Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes |
| 000B69 (2004) |
| Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy |
| 000D98 (2003) |
| Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire |
| 000E94 (2002) |
| Vertical cavity InGaN LEDs grown by MOVPE |
| 000E99 (2002) |
| The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes |
| 000F21 (2002) |
| Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells |
| 001108 (2001-04-01) |
| Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure |
| 001176 (2001) |
| Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers |
| 001187 (2001) |
| Optical properties of self-assembled InGaN/GaN quantum dots |
| 001265 (2001) |
| Dual contribution to the stokes shift in InGaN-GaN Quantum wells |
| 001269 (2001) |
| Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy |
| 001326 (2000-08-01) |
| Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation |
| 001446 (2000) |
| Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111) |
| 001522 (1999-10-25) |
| Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN |
| 001698 (1999) |
| Molecular beam epitaxy growth of nitride materials |
| 001880 (1998-03-02) |
| Real time control of InxGa1-xN molecular beam epitaxy growth |
| 001955 (1998) |
| Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy |
| 001B34 (1997-04-15) |
| Surface segregation in (Ga,In)As/GaAs quantum boxes |
| 001E82 (1996) |
| Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs : a complementary study |
| 002044 (1995-06-19) |
| Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures |
| 002113 (1995) |
| Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures |
| 002141 (1995) |
| Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C |
| 002260 (1994-08-29) |
| Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures |
| 002431 (1994) |
| Critical thickness for islanded growth of highly strained InxGa1-xAs on GaAs(001) |
| 002552 (1993) |
| Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates |
| 002588 (1993) |
| Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials |
| 002593 (1993) |
| Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells |
| 002633 (1993) |
| Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells |
| 002653 (1993) |
| Improvement of the growth of InxGa1-xAs on GaAs (001) using Te as surfactant |
| 002673 (1993) |
| Extension of the layer-by-layer growth regime of InxGa1-xAs on GaAs (001) |
| 002681 (1993) |
| Epitaxial growth of highly strained InxGa1-xAs on GaAs(001) : the role of surface diffusion length |
| 002803 (1992) |
| Surfactant mediated epitaxial growth of InxGa1-xAs on GaAs (001) |
| 002916 (1992) |
| Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers |
| 002C41 (1989) |
| Quantitative evaluation of the surface segregation in III-V ternary alloys by X-ray photoelectron spectroscopy |
| 002D32 (1988) |
| Thermodynamic analysis of the molecular beam epitaxy of AlInAs alloys |
| 002D49 (1988) |
| Role of elastic strain and relaxation on the molecular-beam epitaxial growth of III-V alloy pseudomorphic layers |
| 002E79 (1987) |
| Strain-induced In incorporation coefficient variation in the growth of Al1-x Inx as alloys by molecular beam epitaxy |
| 002F24 (1987) |
| Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-xAs and GaxIn1-xAs epitaxial layers grown by molecular beam epitaxy |
| 003053 (1986) |
| A chemical etching process to obtain clean InP {001} surfaces |
| 000155 (2011) |
| The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates |
| 000205 (2011) |
| Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds |
| 000217 (2011) |
| Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots |
| 000495 (2008) |
| Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures |
| 000651 (2007) |
| Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions |
| 000705 (2007) |
| Current status of AlInN layers lattice-matched to GaN for photonics and electronics |
| 000730 (2007) |
| AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination |
| 000767 (2006) |
| Structural characterisation of Sb-based heterostructures by X-ray scattering methods |
| 000A11 (2005) |
| Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells |
| 000A19 (2005) |
| Alumina-rich spinel : A new substrate for the growth of high quality GaN-based light-emitting diodes |
| 000B09 (2004) |
| Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities and O2 annealing effects |
| 000D49 (2003) |
| Indium surface segregation in AlSb and GaSb |
| 000E27 (2002-10-28) |
| Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures |
| 001234 (2001) |
| In situ etching at InGaAs/GaAs quantum well interfaces |
| 001312 (2000-10-02) |
| Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy |
| 001359 (2000) |
| Réalisation de structures photoniques avancées |
| 001443 (2000) |
| High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range |
| 001557 (1999-06-28) |
| An efficient way to improve compositional abruptness at the GaAs on GaInAs interface |
| 002159 (1995) |
| Light-induced defects in plasma-hydrogenated InP:Zn |
| 002239 (1994-11) |
| Développement, mise en œuvre, et qualification d'un réacteur spécifique à l'épitaxie par jets moléculaires d'organo-métalliques (EJMOM) |
| 002736 (1993) |
| Band offsets of Ga0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions |
| 002810 (1992) |
| Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells |
| 002911 (1992) |
| Direct determination of the valence-band offsets at Ga0.47In0.53As/InP and InP/Ga0.47In0.53As heterostructures by ultraviolet photoemission spectroscopy |
| 002913 (1992) |
| Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy |
