Serveur d'exploration sur l'Indium

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Le cluster A. El Kaaouachi - G. Biskupski

Terms

10A. El Kaaouachi
16G. Biskupski
8A. Briggs

Associations

Freq.WeightAssociation
100.791A. El Kaaouachi - G. Biskupski
70.619A. Briggs - G. Biskupski

Documents par ordre de pertinence
001705 (1999) Localisation and interaction effects in metallic n-type InP
001900 (1998) Théorie d'échelle appliquée à la transition métal-isolant dans l InP de type n
001D18 (1997) A criterion to distinguish the contribution of the localisation and interaction effects to the T1/2 dependence of the conductivity in n-type InP
002A58 (1991) Critical behaviour of the conductivity in metallic n-type InP close to the metal-insulator transition
000371 (2009) Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor
000B85 (2004) Analysis of the behaviour of magnitude m with magnetic field in corrective term "mT1/2" of the metallic electrical conductivity in n-type InP
000D09 (2003) Positive and negative magnetoresistance on both sides of the metal-insulator transition in metallic n-type InP
001197 (2001) Negative magnetoresistance in metallic n-type InP
001678 (1999) Positive magnetoresistance in the variable range hopping regime in metallic n-type InP
001D12 (1997) Analysis of the behaviour of electrical conductivity with magnetic field in n-type InP
002D27 (1988) Variable-range hopping and Coulomb gap in indium phosphide
002F87 (1986) The Anderson transition in a magnetic field: experimental evidence for a new phase diagram
003108 (1984) Magnetic field-induced metal-insulator transition in InP: new result at very low temperatures
001871 (1998-05) Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption
002763 (1992-06) Mécanismes de conduction à basse température au voisinage de la transition métal-isolant dans le phosphure d'indium
002969 (1991) The temperature dependence of the inelastic scattering time in metallic n-InP
003025 (1986) First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands

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