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Serveur d'exploration sur l'Indium

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Le cluster E. Losson - K. Dmowski

Terms

8E. Losson
5K. Dmowski
20A. Bath
21B. Lepley
6P. Thevenin
7A. Ahaitouf

Associations

Freq.WeightAssociation
50.791E. Losson - K. Dmowski
120.586A. Bath - B. Lepley
60.548A. Bath - P. Thevenin
70.540B. Lepley - E. Losson
60.507A. Ahaitouf - A. Bath
Documents par ordre de pertinence
001A14 (1998) Electrical properties of MIS structures with BN insulating layer
001C20 (1997) Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications
002036 (1995-08) Interface state measurements by the DLS-82E lock-in spectrometer
002139 (1995) Peak and side data analyses to measure deep levels by DLS-82E lock-in spectrometer
001485 (2000) Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity
001E87 (1996) Practical methods to improve DLTS data smoothing
001E90 (1996) Photoluminescence intensity study of n-InP diodes in the accumulation regime
002187 (1995) Electrical properties of Au/Bn[BN]/InP MIS diodes
002584 (1993) Photoluminescence characterization of structures obtained by multipolar plasma oxidation of InP
002745 (1993) A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes
002988 (1991) Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film
000497 (2008) Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
001438 (2000) Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures
001748 (1999) Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures
001935 (1998) Stability of sulfur-treated n-InP Schottky structures, studied by current-voltage measurements
001C63 (1997) Improved high frequency C-V method for interface state analysis on MIS structures
002366 (1994) Plasma enhanced chemical vapour deposition of boron nitride onto InP
002372 (1994) On the interface state distribution of BN on InP structures
002610 (1993) New method of deep level transient spectroscopy analysis : a five emission rate method
002D22 (1988) Caractérisation de l'interface isolant InP formé en oxydation plasma par l'étude des transitoires de capacité DLTS et DDLTS
002E15 (1988) Determination by optical DLTS of the distribution of states near the valence band of plasma oxidized n-type InP
000025 (2013) Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
001C19 (1997) Procedure to minimize interface-state errors in MIS doping profile determinations
002030 (1995-09) Contribution à l'étude des propriétés électroniques des structures M.I.S sur InP (Au/BN/InP)
002228 (1994-12) Etude par spectroscopie DLTS des structures formées sur InP(n) par oxydation plasma
002424 (1994) Determination of interface state density on Au/Ta2O5/n-InP structures by different methods
002527 (1993) Transport processes in Au/n-InP and Au/oxide/n-InP devices treated in oxygen multipolar plasma
002A37 (1991) Experimental analysis of temperature dependence of deep-level capture cross-section properties at the Au oxidized InP interface
002E96 (1987) Preparation and electrical properties of thin native oxide double-layer insulator films on n-type InP
003014 (1986) Interface properties of MIS structures prepared by plasma oxidation of n-InP
Wicri

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