| 000956 (2005) |
| Growth of porous InP in acidic liquid ammonia |
| 000021 (2013) |
| Stability of InP oxide versus solvated electrons in liquid ammonia |
| 000261 (2010) |
| The pH response of the InP/liquid ammonia interface at 223 K: A pure nernstian behavior |
| 000360 (2010) |
| An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia |
| 000574 (2008) |
| First evidence of stable P-N bonds after anodic treatment of InP in liquid ammonia : A new III-V material passivation route |
| 000883 (2005) |
| Study of the flat band potential of inp in liquid ammonia : A nernstian behavior? |
| 000F10 (2002) |
| Study of a thin anodic oxide on n-InP by photocurrent transient, capacitance measurements and surface analysis |
| 001135 (2001) |
| Thin anodic oxides on n-InP studied by photocurrent transients and surface analysis |
| 001183 (2001) |
| Oxygen reduction mechanism in acidic liquid ammonia (223 K) : Contribution of Pt microelectrodes and III-V semiconductors |
| 001682 (1999) |
| Oxygen reduction mechanisms at p-InP and p-GaAs electrodes in liquid ammonia in neutral buffered medium and acidic media |
| 001D00 (1997) |
| Cathodic decomposition of n-InP during hydrogen evolution in liquid ammonia |
| 000031 (2013) |
| Phosphazene like film formation on InP in liquid ammonia (223 K) |
| 000759 (2006) |
| Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS |
| 000A12 (2005) |
| Cadmium sulfide/indium phosphide as a model system for understanding indium related chemical reactivity at CIGS/CDS interface : XPS and ex situ luminescence investigations |
| 000B76 (2004) |
| Cathodic behavior of n-InP modified by a thin anodic oxide |
| 000C90 (2003) |
| Studies of buried interfaces Cu(In, Ga)Se2/CdS XPS and electrical investigations |
| 000D92 (2003) |
| Chemical elaboration of well defined Cu(In, Ga)Se2 surfaces after aqueous oxidation etching |
| 000E92 (2002) |
| XPS and electrical studies of buried interfaces in Cu(In, Ga)Se2 solar cells |
| 001005 (2002) |
| High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se2 surface |
| 001038 (2002) |
| Cathodic decomposition of InP studied by XPS |
| 001215 (2001) |
| Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysis |
| 002334 (1994) |
| Mise en évidence des mécanismes d'injection de porteurs majoritaires à l'interface semiconducteur/électrolyte |
| 002520 (1993) |
| n-InP flat band potential : a pH probe in nonaqueous and mixed solvents ? |
| 000007 (2013) |
| Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation |
| 000151 (2011) |
| Thinning of CIGS solar cells: Part II: Cell characterizations |
| 000152 (2011) |
| Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions |
| 000616 (2007) |
| Thermodynamic and experimental study of chemical bath deposition of Zn(S, O, OH) buffer layers in basic aqueous ammonia solutions. Cell results with electrodeposited CuIn(S, Se)2 absorbers |
| 000880 (2005) |
| Surface reactivity of insb studied by cyclic voltammetry coupled to xps |
| 000961 (2005) |
| Grain size of lead selenide electrodeposited onto InP followed by photoluminescence of the InP substrate |
| 000D60 (2003) |
| Growth of anodic oxides on n-InP studied by electrochemistry and surface analysis. Correlation between oxidation methods and passivating properties |
| 001A12 (1998) |
| Electrochemical characterisation of a semiconductor-metal junction : n-type InP|Cu; influence of the structure of the metallic layer |
| 001C88 (1997) |
| Effect of copper coating on the behaviour of p-InP electrodes |
| 002417 (1994) |
| Electrochemical techniques for the elucidation of the interface structure of the n-InP/aqueous electrolyte junction |
| 002799 (1992) |
| The photodissolution of InP |
| 002C25 (1989) |
| Adsorption du sulfure de sodium en milieu aqueux sur une électrode semi-conductrice de InP (1¯1¯1¯) de type n |
| 002D88 (1988) |
| In situ modification of the energetic structure of the n-GaP/NH3 junction in the presence of solvated electrons |
| 000468 (2009) |
| Compositional Engineering of Chemical Bath Deposited (Zn,Cd)S Buffer Layers for Electrodeposited CuIn(S,Se)2 and Coevaporated Cu(In,Ga)Se2 Solar Cells |
| 000A04 (2005) |
| Correlation between photoluminescence N-InP and morphology of Cu electrodeposition |
| 000D02 (2003) |
| Role of cadmium on epitaxial growth of PbSe on InP single crystals |
| 001254 (2001) |
| Electrodeposition of CdSe on GaAs and InP substrates |
| 001367 (2000) |
| Wet treatment based interface engineering for high efficiency Cu(In, Ga)Se2 solar cells |
| 002956 (1991) |
| Weakening of the hole injection effect proceeding from the reduction of ceric species after oxidation of indium phoshide compounds |
| 002A46 (1991) |
| Electrochemical properties and surface modifications of GaInAs ternary alloys in aqueous solutions |
| 002A53 (1991) |
| Dissolution rate of III-V compound oxides influence of cerium species |
| 002B72 (1990) |
| Electron excitation during anodic decomposition of III-V compounds induced by hole injecting species (Ce4+) |
| 002C36 (1989) |
| Strong enhancement of the photoluminescence of n-type indium phosphide under a cathodic polarization |
| 002E30 (1988) |
| A study of the mechanisms of O2 reduction at n- and p-InP in acid aqueous electrolyte |
| 002E83 (1987) |
| Spectroellipsometric study of the electrochemical modification of InP |
