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Serveur d'exploration sur l'Indium

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Le cluster T. Amand - X. Marie

Terms

32T. Amand
37X. Marie
22J. Barrau
12M. Brousseau
8B. Urbaszek
14G. Bacquet
7N. Lauret
7M. Paillard

Associations

Freq.WeightAssociation
290.843T. Amand - X. Marie
110.677J. Barrau - M. Brousseau
100.510M. Brousseau - T. Amand
80.500B. Urbaszek - T. Amand
60.483J. Barrau - N. Lauret
50.505G. Bacquet - N. Lauret
70.468M. Paillard - T. Amand
120.452J. Barrau - T. Amand
70.435M. Paillard - X. Marie
70.407B. Urbaszek - X. Marie
110.386J. Barrau - X. Marie
80.380M. Brousseau - X. Marie
50.285G. Bacquet - J. Barrau
Documents par ordre de pertinence
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002977 (1991) Stark effect in GaInAs/GaInAsP quantum-wells
001E75 (1996) Spin repolarization in bidimensional gas of interacting excitons
002169 (1995) Hole spin relaxation in intrinsic quantum wells
002243 (1994-10-15) Exciton formation and hole-spin relaxation in intrinsic quantum wells
002415 (1994) Enhanced exciton blue shift in spin polarized dense exciton system in quantum wells
002551 (1993) Spin relaxation of excitons in strained InGaAs/GaAs quantum wells
002789 (1992) Well-width dependence of the excitonic lifetime in strained III-V quantum wells
002A12 (1991) Interfacial-band discontinuities for strained layers on InxGa1-x as grown on (100) GaAs
000394 (2009) Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000633 (2007) Role of hyperfine interaction on electron spin optical orientation in charge-controlled InAs-GaAs single quantum dots
000774 (2006) Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots
000974 (2005) Exciton spin manipulation in inAs/GaAs quantum dots : Exchange interaction and magnetic field effects
000983 (2005) Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots
000991 (2005) Direct observation of the electron spin relaxation induced by nuclei in quantum dots
000A77 (2004) Spin dynamics in undoped and n-doped InAs/GaAs quantum dots
000B79 (2004) Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
001019 (2002) Exciton spin dynamics in self-organized InAs/GaAs quantum dots
001024 (2002) Electron spin redistribution due to Pauli blocking in quantum dots and quantum wells
001099 (2001-05-14) Wetting layer carrier dynamics in InAs/InP quantum dots
001116 (2001-02-19) Spin Relaxation Quenching in Semiconductor Quantum Dots
001264 (2001) Dynamical redistribution of mean electron spin over the energy spectrum of quantum dots
001354 (2000-01-03) Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation
001513 (1999-11-29) Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates
002552 (1993) Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates
002553 (1993) Spin orientation by optical pumping in strained InxGa1-xAs/GaAs quantum wells
002593 (1993) Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells
002810 (1992) Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells
002867 (1992) Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000A47 (2004-01-15) Temperature-dependent linewidth of charged excitons in semiconductor quantum dots: Strongly broadened ground state transitions due to acoustic phonon scattering
000C97 (2003) Spin polarization dynamics in n-doped InAs/GaAs quantum dots
000E24 (2002-11-11) Optically Driven Spin Memory in n-Doped InAs-GaAs Quantum Dots
000F23 (2002) Spin dynamics of neutral and charged excitons in InAs/GaAs quantum dots: towards Q-bit implementation?
001579 (1999-05) Electron spin beats in InGaAs/GaAs quantum dots
001B93 (1997) Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates
002078 (1995-01-15) Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques
000212 (2011) Hot carrier relaxation process in InGaN epilayers : Novel Gain Materials Based on III-V-N Compounds
000855 (2006) Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000914 (2005) Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000975 (2005) Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
000C54 (2003-03-01) In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000F50 (2002) Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001218 (2001) Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs
001504 (1999-12-01) Strain optimization for high differential gain and low current operation in 1.55 μm InGaAs/InGaAsP quantum well lasers
001686 (1999) Optical characterization of bulk CuIn3Se5
001957 (1998) Photoluminescence in p-type CuInSe2 single crystals
001A07 (1998) Excitation intensity dependence of the near band-edge photoluminescence spectra of CuInTe2 at 4.2 K
001A65 (1997-11-01) Temperature dependence of the photoluminescence spectra of single crystals of CuInTe2
002019 (1995-09-15) Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers
002141 (1995) Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C
002155 (1995) Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP
002271 (1994-07) Contribution à l'optimisation de structures laser à puits quantiques contraints sur la maille d'InP
002282 (1994-06) Etude par pompage optique de puits quantiques contraints Ga1-xInxAs/GaAs
002350 (1994) Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm
002352 (1994) Spin orientation by optical pumping in InxGa1-xAs/AlAs multiple quantum wells
002797 (1992) Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers
003009 (1986) Luminescence of heavily electron irradiated InP
003045 (1986) An experimental evidence of the destruction of complex defects by the introduction of dislocations in InP
Wicri

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