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Racine

Serveur d'exploration sur l'Indium

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Le cluster G. Halkias - K. Zekentes

Terms

8G. Halkias
11K. Zekentes
13A. Georgakilas
14A. Tabata
6S. Moneger
59G. Guillot
39T. Benyattou
9A. Nouailhat

Associations

Freq.WeightAssociation
80.853G. Halkias - K. Zekentes
80.784A. Georgakilas - G. Halkias
80.756A. Tabata - G. Halkias
90.753A. Georgakilas - K. Zekentes
60.655A. Tabata - S. Moneger
80.645A. Tabata - K. Zekentes
80.593A. Georgakilas - A. Tabata
100.428A. Tabata - T. Benyattou
270.563G. Guillot - T. Benyattou
90.391A. Nouailhat - G. Guillot
110.383A. Tabata - G. Guillot
70.322G. Guillot - G. Halkias
70.275G. Guillot - K. Zekentes
70.253A. Georgakilas - G. Guillot
Documents par ordre de pertinence
002581 (1993) Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells
002536 (1993) Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
002565 (1993) Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates
002566 (1993) Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002586 (1993) Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
002747 (1993) A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology
002272 (1994-07) Optical properties of InAs/InP surface layers formed during the arsenic stabilization process
002351 (1994) Strain relaxation studied by photoluminescence by double crystal X-ray diffraction measurements in strained InGaAs
002582 (1993) Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
002994 (1991) Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000E22 (2002-11-15) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
001724 (1999) Highly tunable and selective fabry Perot filter based on InP-air Bragg mirrors for W.D.M. applications
001921 (1998) Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
001994 (1998) Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications
001995 (1998) Highly selective 1.55 μm InP/air gap micromachined Fabry-Perot filter for optical communications
001A13 (1998) Electro-absorption modulator using a type-II quantum well in the InxGa1-xAs/InAlAs/InP system
001B15 (1997-06-16) Type II recombination and band offset determination in a tensile strained InGaAs quantum well
001C31 (1997) Optical characterization methods of InP based micro-opto-electro-mechanical systems
001C57 (1997) InP-based micro-mechanical tunable and selective photodetector for WDM systems
001D74 (1996-07-15) Simulation of the capacitance-voltage characteristics of a single-quantum-well structure based on the self-consistent solution of the Schrödinger and Poisson equations
001F29 (1996) Highly sensitive In0.75Ga0.25As/AlInAs Hall sensors
001F48 (1996) Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well
002031 (1995-08-28) Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP
002083 (1995-01-01) Admittance spectroscopy of InAlAs/InGaAs single-quantum-well structure with high concentration of electron traps in InAlAs layers
002135 (1995) Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates
002136 (1995) Photoluminescence and band offsets of AlInAs/InP
002170 (1995) High-sensitivity Hall sensors using GaInAs/AlInAs pseudomorphic heterostructures
002265 (1994-08-01) Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
002907 (1992) Electrical behavior of Yb ion in p- and n-type InP
002B52 (1990) Identification of the Fe acceptor llevel in Ga0.47In0.53As
002C12 (1989) Mécanismes de dérive du courant d'obscurité sur des photodiodes GaInAs/InP planar passivées par SiNx
002C90 (1989) Absolute photoionization cross-sections of 3d ions in InP: a comparison between experiment and theory
002E93 (1987) Radiative decay processes of vanadium ions in III-V compound semiconductors
002E94 (1987) Properties of InP doped with Led ions
002E98 (1987) Photoluminescence studies of Mg and Hg implanted Ga0,47In0,53As
002F85 (1986) The donor level of vanadium in InP
003000 (1986) Properties of titanium in InP
003047 (1986) Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide
003049 (1986) A study of deep levels by transient spectroscopy on p-type liquid-phase-epitaxial GaxIn1-xAsyP1-y grown on semi-insulating InP
000766 (2006) Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
000785 (2006) Photoreflectance study at the micrometer scale
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000914 (2005) Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000932 (2005) Micro-raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures
000943 (2005) Interfacial structure of MBE grown InN on GaN
000C22 (2003-08-15) Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000D12 (2003) Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
000E33 (2002-09-01) Propagation losses of the fundamental mode in a single line-defect photonic crystal waveguide on an InP membrane
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
000F55 (2002) Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
000F70 (2002) Monolithic tunable InP-based vertical cavity surface emitting laser
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001337 (2000-04-17) Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
001546 (1999-08-01) Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001603 (1999-01-18) Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)
001675 (1999) Random telegraph signal noise instabilities in latticemismatched InGaAs/InP photodiodes
001688 (1999) Optical and mechanical design of an InP based tunable detector for gas sensing applications
001774 (1999) Alloying effects in self-assembled InAs/InP dots
001803 (1998-11-16) Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
001969 (1998) New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's
001C90 (1997) Deep trap characterisation and conduction band offset determination of Al0.48In0.52As/(Ga0.7Al0.3)0.48In0.52As heterostructures
001D39 (1996-11) Caractérisations électro-optiques de couches AlInAs épitaxiées sur InP
001E28 (1996-02-15) Weak antilocalization and spin precession in quantum wells
002015 (1995-10) Etude des propriétés optiques des microstructures InGaAs/InAlAs épitaxiées sur InP
002115 (1995) Study of deep level defect behaviour in rapid thermal annealed Fe-doped semi-insulating InPeng
002116 (1995) Study of RTS noise and excess currents in lattice-mismatched InP/InGaAs/InP photodetector arrays
002298 (1994-04-15) Defect-assisted apparent lowering of band offsets
002422 (1994) Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations
002426 (1994) Deep-level characterization of AlxIn1-xAs layers grown by low pressure metal-organic chemical vapor deposition
002541 (1993) Study of discrete current fluctuations in the metal/InP native oxide/InP structures
002824 (1992) Passivation induced deep levels in GaInAs PIN planar photodiodes
002927 (1992) Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by photoinduced current transient spectroscopy
002A75 (1990) Contribution à la mise en place d'un outil de caractérisation précoce de couches contraintes INP-INGAAS-INP pour la réalisation de photo détecteur haute performance
Wicri

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