Le cluster F. Aniel - R. Adde

Terms

8	F. Aniel
10	R. Adde
6	A. De Lustrac
8	Y. Jin
14	P. Crozat

Associations

Freq.	Weight	Association
8	0.894	F. Aniel - R. Adde
7	0.783	R. Adde - Y. Jin
6	0.866	A. De Lustrac - Y. Jin
6	0.775	A. De Lustrac - R. Adde
8	0.676	P. Crozat - R. Adde
7	0.661	P. Crozat - Y. Jin
6	0.655	A. De Lustrac - P. Crozat
5	0.625	F. Aniel - Y. Jin
6	0.567	F. Aniel - P. Crozat

Documents par ordre de pertinence

001D78 (1996-07-01)		Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP
001F51 (1996)		Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures : an overview
002400 (1994)		High electric field transport effects on low temperature operation of pseudomorphic HEMTs
002667 (1993)		Gate length electric parameter dependences of ultra-submicrometre δ-doped pseudomorphic HEMTs
002063 (1995-03-01)		Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors
002386 (1994)		Low temperature low voltage operation of HEMTs on InP
002714 (1993)		Cryogenic investigation of gate leakage and RF performance down to 50K of 0.2μm AlInAs/GaInAs/InP HEMT's
002563 (1993)		Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm
001343 (2000-03-01)		Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
001473 (2000)		Complex current gain and cutoff frequency determination of HBTs
000735 (2007)		1.55μm InP-based electrically-pumped VECSELs : comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices
000B99 (2003-12-29)		Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm
000C60 (2003-02-10)		Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime
000D78 (2003)		Electrical properties of 1.55 μm sensitive ion-irradiated Ingaas with subpicosecond carrier lifetime
001943 (1998)		Reduced timing jitter of two-section 1.55-μm laser diodes under gain-/loss-switching regime at multigigahertz rates
001A00 (1998)		HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterization
002819 (1992)		Picosecond large-signal switching characteristics of a pseudomorphic AIGaAs/InGaAs modulated doped field effect transistor

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024