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Serveur d'exploration sur l'Indium

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Le cluster M. Succi - T. Leese

Terms

5M. Succi
5T. Leese
5Ch. Giesen
6S. Rushworth
8M. Heuken
19O. Briot
14S. Ruffenach
9M. Moret

Associations

Freq.WeightAssociation
51.000M. Succi - T. Leese
51.000Ch. Giesen - T. Leese
51.000Ch. Giesen - M. Succi
50.913S. Rushworth - T. Leese
50.913M. Succi - S. Rushworth
50.913Ch. Giesen - S. Rushworth
60.866M. Heuken - S. Rushworth
50.791M. Heuken - T. Leese
50.791M. Heuken - M. Succi
50.791Ch. Giesen - M. Heuken
140.858O. Briot - S. Ruffenach
90.802M. Moret - S. Ruffenach
50.745M. Moret - T. Leese
50.745M. Moret - M. Succi
50.745Ch. Giesen - M. Moret
90.688M. Moret - O. Briot
50.680M. Moret - S. Rushworth
50.598S. Ruffenach - T. Leese
50.598M. Succi - S. Ruffenach
50.598Ch. Giesen - S. Ruffenach
50.589M. Heuken - M. Moret
50.546S. Ruffenach - S. Rushworth
50.513O. Briot - T. Leese
50.513M. Succi - O. Briot
50.513Ch. Giesen - O. Briot
50.472M. Heuken - S. Ruffenach
50.468O. Briot - S. Rushworth
50.406M. Heuken - O. Briot
Documents par ordre de pertinence
000411 (2009) Optical, structural investigations and band-gap bowing parameter of GaInN alloys
000421 (2009) MOVPE growth of InN buffer layers on sapphire
000438 (2009) InN excitonic deformation potentials determined experimentally
000452 (2009) Growth of InN films and nanostructures by MOVPE
000474 (2009) Alternative precursors for MOVPE growth of InN and GaN at low temperature
000082 (2012) Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000219 (2011) Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides
000420 (2009) Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
000876 (2005) Terahertz investigation of high quality indium nitride epitaxial layers
000896 (2005) Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms
000A89 (2004) Raman scattering in hexagonal InN under high pressure
000B92 (2004) Absorption and Raman scattering processes in InN films and dots
000C14 (2003-10-06) Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
001335 (2000-05-01) InAs(PSb)-based W quantum well laser diodes emitting near 3.3 μm
000260 (2010) The structure of InAlN/GaN heterostructures for high electron mobility transistors
000760 (2006) Superconductivity of InN with a well defined Fermi surface
000B71 (2004) Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000C00 (2003-12-15) Raman scattering in large single indium nitride dots: Correlation between morphology and strain
001146 (2001) Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs
001D76 (1996-07-15) Coupled LO-plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions
002199 (1995) Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells
Wicri

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